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| AUIRFL014N Datasheet, PDF (1/9 Pages) International Rectifier – Advanced Planar Technology Low On-Resistance | |||
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AUTOMOTIVE GRADE
Features
ï· Advanced Planar Technology
ï· Low On-Resistance
ï· Dynamic dv/dt Rating
ï· 150°C Operating Temperature
ï· Fast Switching
ï· Fully Avalanche Rated
ï· Repetitive Avalanche Allowed up to Tjmax
ï· Lead-Free, RoHS Compliant
ï· Automotive Qualified *
Description
Specifically designed for Automotive applications, this Cellular
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are
well known for, provides the designer with an extremely efficient
and reliable device for use in Automotive and a wide variety of
other applications.
AUIRFL014N
VDSS
RDS(on) max.
ID
55V
0.16ïï
1.9A
D
S
D
G
SOT-223
AUIRFL014N
G
Gate
D
Drain
S
Source
Base part number
AUIRFL014N
Package Type
SOT-223
Standard Pack
Form
Quantity
Tape and Reel
2500
Orderable Part Number
AUIRFL014NTR
Absolute Maximum Ratings
Stresses beyond those listed under âAbsolute Maximum Ratingsâ may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
ID @ TA = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V ï
Continuous Drain Current, VGS @ 10V ï
Continuous Drain Current, VGS @ 10V ï
Pulsed Drain Current ï
Maximum Power Dissipation (PCB Mount) ï
Maximum Power Dissipation (PCB Mount) ï
Linear Derating Factor (PCB Mount) ï
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited) ï
Avalanche Current ï
Repetitive Avalanche Energy ïï
Peak Diode Recovery dv/dt ï
Operating Junction and
Storage Temperature Range
Max.
2.7
1.9
1.5
15
2.1
1.0
8.3
± 20
48
1.7
0.1
5.0
-55 to + 150
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Symbol
Parameter
Rï±JA
Junction-to-Ambient (PCB Mount, steady state) ï
Rï±JA
Junction-to-Ambient (PCB Mount, steady state) ï
Typ.
90
50
Max.
120
60
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
2015-10-5
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