AUIRF9952Q Datasheet, PDF (1/11 Pages) International Rectifier – Advanced Planar Technology Low On-Resistance

AUTOMOTIVE GRADE
AUIRF9952Q
Features
 Advanced Planar Technology
 Low On-Resistance
 Logic Level Gate Drive
 Dual N and P Channel MOSFET
 Dynamic dv/dt Rating
 150°C Operating Temperature
 Fast Switching
 Full Avalanche Rated
 Repetitive Avalanche Allowed up to Tjmax
 Lead-Free, RoHS Compliant
 Automotive Qualified *
N-CHANNEL MOSFET
S1
1
8
D1
N-CH P-CH
G1
2
S2
3
7
D1
V_DSS
6
D2
30V -30V
G2
4
5 _{D2 RDS(on) max. 0.10 0.25ï€} 
P-CHANNEL MOSFET
Top View
I_D
3.5A -2.3A
Description
Specifically designed for Automotive applications, this cellular design of
HEXFET® Power MOSFETs utilizes the latest processing techniques to
achieve low on-resistance per silicon area. This benefit combined with
the fast switching speed and ruggedized device design that HEXFET
power MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in Automotive and a wide
variety of other applications.
SO-8
AUIRF9952Q
G
Gate
D
Drain
S
Source
Base part number
AUIRF952Q
Package Type
SO-8
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
AUIRF9952QTR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
V_GS
E_AS
I_AR
E_AR
dv/dt
T_J
T_STG
Parameter
10 Sec. Pulsed Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited) 
Avalanche Current 
Repetitive Avalanche Energy 
Peak Diode Recovery dv/dt 
Operating Junction and
Storage Temperature Range
Max.
N-Channel
P-Channel
3.5
-2.3
2.8
-1.8
16
-10
2.0
1.3
0.016
± 20
44
57
2.0
-1.3
0.25
5.0
-5.0
-55 to + 150
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Symbol
Parameter
R_JA
Junction-to-Ambient ( PCB Mount, steady state) 
Typ.
–––
Max.
62.5
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
2015-10-5