AUIRF7665S2TR Datasheet, PDF (1/11 Pages) International Rectifier – DirectFET

Power MOSFET

AUTOMOTIVE GRADE
AUIRF7665S2TR
 Advanced Process Technology
 Optimized for Class D Audio Amplifier Applications
 Low Rds(on) for Improved Efficiency
 Low Qg for Better THD and Improved Efficiency
 Low Qrr for Better THD and Lower EMI
 Low Parasitic Inductance for Reduced Ringing and Lower EMI
 Delivers up to 100W per Channel into 8 with No Heatsink
 Dual Sided Cooling
 175°C Operating Temperature
 Repetitive Avalanche Capability for Robustness and Reliability
 Lead free, RoHS and Halogen free
 Automotive Qualified *
Automotive DirectFET^® Power MOSFET 
V_(BR)DSS
R_DS(on) typ.
max.
R_{G (typical)}
Q_{g (typical)}
100V
51m
62m
3.5
8.3nC
Applicable DirectFET^® Outline and Substrate Outline 
SB
DirectFET^® ISOMETRIC
SB
SC
M2
M4
L4
L6
L8
Description
The AUIRF7665S2 combines the latest Automotive HEXFET^® Power MOSFET Silicon technology with the advanced DirectFET^® packaging platform to
produce a best in class part for Automotive Class D audio amplifier applications. The DirectFET^® package is compatible with existing layout
geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application
note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET^® package allows dual sided cooling to maximize
thermal transfer in automotive power systems.
This HEXFET^® Power MOSFET optimizes gate charge, body diode reverse recovery and internal gate resistance to improve key Class D audio
amplifier performance factors such as efficiency, THD and EMI. Moreover the DirectFET^® packaging platform offers low parasitic inductance and
resistance when compared to conventional wire bonded SOIC packages which improves EMI performance by reducing the voltage ringing that
accompanies current transients.
These features combine to make this MOSFET a highly desirable component in Automotive Class D audio amplifier systems.
Base Part Number
AUIRF7665S2
Package Type
DirectFET Small Can
Standard Pack
Form
Quantity
Tape and Reel
4800
Orderable Part Number
AUIRF7665S2TR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
V_DS
V_GS
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_A = 25°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
P_D @T_A = 25°C
E_AS
E_AS (Tested)
I_AR
E_AR
T_P
T_J
T_STG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V_GS @ 10V (Silicon Limited) 
Continuous Drain Current, V_GS @ 10V (Silicon Limited) 
Continuous Drain Current, V_GS @ 10V (Silicon Limited) 
Continuous Drain Current, V_GS @ 10V (Package Limited)
Pulsed Drain Current 
Power Dissipation 
Power Dissipation 
Single Pulse Avalanche Energy (Thermally Limited) 
Single Pulse Avalanche Energy 
Avalanche Current 
Repetitive Avalanche Energy 
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
Max.
100
±20
14.4
10.2
4.1
77
58
30
2.4
37
56
See Fig. 16, 17, 18a, 18b
270
-55 to + 175
Units
V
A
W
mJ
A
mJ
°C
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
2015-10-5