AUIRF7478Q Datasheet, PDF (1/9 Pages) International Rectifier – AUTOMOTIVE GRADE

AUTOMOTIVE GRADE
AUIRF7478Q
Features
 Advanced Planar Technology
 Low On-Resistance
 Logic Level Gate Drive
 Dynamic dv/dt Rating
 150°C Operating Temperature
 Fast Switching
 Repetitive Avalanche Allowed up to Tjmax
 Lead-Free, RoHS Compliant
 Automotive Qualified *
S
1
S
2
S
3
G
4
AA
8
D
7
D
6
D
5
D
Top View
V_DSS
R_DS(on) typ.
max.
I_D
60V
20m
26m
7.0A
Description
Specifically designed for Automotive applications, this cellular
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are
well known for, provides the designer with an extremely efficient
and reliable device for use in Automotive and a wide variety of
other applications.
SO-8
AUIRF7478Q
G
Gate
D
Drain
S
Source
Base part number
AUIRF7478Q
Package Type
SO-8
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
AUIRF7478QTR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
V_DS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
V_GS
E_AS
I_AR
dv/dt
T_J
T_STG
Parameter
Drain-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Maximum Power Dissipation 
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited) 
Avalanche Current 
Peak Diode Recovery dv/dt 
Operating Junction and
Storage Temperature Range
Max.
60
7.0
5.6
56
2.5
0.02
± 20
140
4.2
3.7
-55 to + 150
Units
V
A
W
W/°C
V
mJ
A
V/ns
°C
Thermal Resistance
Symbol
Parameter
R_JL
Junction-to-Drain Lead
R_JA
Junction-to-Ambient 
Typ.
–––
–––
Max.
20
50
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
2015-9-30