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| AUIRF7416Q Datasheet, PDF (1/10 Pages) International Rectifier – Advanced Process Technology Low On-Resistance | |||
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AUTOMOTIVE GRADE
AUIRF7416Q
Features
ï· Advanced Process Technology
ï· Low On-Resistance
ï· Logic Level Gate Drive
ï· P Channel MOSFET
ï· Dynamic dv/dt Rating
ï· 150°C Operating Temperature
ï· Fast Switching
ï· Fully Avalanche Rated
ï· Lead-Free, RoHS Compliant
ï· Automotive Qualified *
Description
Specifically designed for Automotive applications, this
cellular design of HEXFET® Power MOSFETs utilizes the
latest processing techniques to achieve low on-resistance
per silicon area. This benefit combined with the fast
switching speed and ruggedized device design that HEXFET
power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in
Automotive and a wide variety of other applications.
S
1
S
2
S
3
G
4
A
8
D
7
D
6
D
5
D
Top View
VDSS
RDS(on) max.
ID
-30V
0.02ïï
-10A
SO-8
AUIRF7416Q
G
Gate
D
Drain
S
Source
Base part number
AUIRF7416Q
Package Type
SO-8
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
AUIRF7416QTR
Absolute Maximum Ratings
Stresses beyond those listed under âAbsolute Maximum Ratingsâ may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
EAS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current ï
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited) ï
Peak Diode Recovery dv/dt ï
Operating Junction and
Storage Temperature Range
Max.
-10
-7.1
-45
2.5
0.02
± 20
370
-5.0
-55 to + 150
Units
A
W
mW°/C
V
mJ
V/ns
°C
Thermal Resistance
Symbol
Parameter
Rï±JA
Junction-to-Ambient ï
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
Typ.
âââ
Max.
50
Units
°C/W
2015-9-30
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