AUIRF7342Q Datasheet, PDF (1/9 Pages) International Rectifier – Advanced Planar Technology Low On-Resistance

AUTOMOTIVE GRADE
AUIRF7342Q
Features
 Advanced Planar Technology
 Low On-Resistance
 Logic Level Gate Drive
 Dual P Channel MOSFET
 Dynamic dv/dt Rating
 150°C Operating Temperature
 Fast Switching
 Fully Avalanche Rated
 Lead-Free, RoHS Compliant
 Automotive Qualified *
S1
1
G1
2
S2
3
G2
4
8
D1
7
D1
6
D2
5
D2
Top View
V_DSS
R_DS(on) max.
I_D
Description
Specifically designed for Automotive applications, this cellular design of
HEXFET® Power MOSFETs utilizes the latest processing techniques
to achieve low on-resistance per silicon area. This benefit combined
with the fast switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in Automotive
and a wide variety of other applications.
SO-8
AUIRF7342Q
G
Gate
D
Drain
-55V
0.105
-3.4A
S
Source
Base part number
AUIRF7342Q
Package Type
SO-8
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
AUIRF7342QTR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
V_DS
Parameter
Drain-Source Voltage
Max.
-55
Units
V
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
P_D @T_A = 70°C
V_GS
V_GSM
E_AS
dv/dt
Continuous Drain Current, V_GS @ -10V
Continuous Drain Current, V_GS @ -10V
Pulsed Drain Current 
Maximum Power Dissipation 
Maximum Power Dissipation
Linear Dearating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage Single Pulse tp < 10µs
Single Pulse Avalanche Energy (Thermally Limited) 
Peak Diode Recovery dv/dt 
-3.4
-2.7
-27
2.0
1.3
0.016
± 20
30
114
5.0
A
W
mW°/C
V
mJ
V/ns
T_J
T_STG
Operating Junction and
Storage Temperature Range
-55 to + 150
°C
Thermal Resistance
Symbol
Parameter
R_JA
Junction-to-Ambient 
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
Typ.
–––
Max.
62.5
Units
°C/W
2015-9-30