AUIRF7319Q Datasheet, PDF (1/11 Pages) International Rectifier – HEXFET® Power MOSFET

AUTOMOTIVE GRADE
AUIRF7319Q
Features
 Advanced Planar Technology
 Low On-Resistance
 Logic Level Gate Drive
 Dual N and P Channel MOSFET
 Surface Mount
 Fully Avalanche Rated
 Lead-Free, RoHS Compliant
 Automotive Qualified *
N-CHANNEL MOSFET
N-CH P-CH
S1
1
G1
2
8
D1
7
D1
V_DSS
30V -30V
S2
3
6 _D2 ^RDS(on) ^{typ. 0.023 0.042ï€} 
G2
4
5
D2
max. 0.029 0.058
P-CHANNEL MOSFET
I_D
6.5A -4.9A
Top View
Description
Specifically designed for Automotive applications, these HEXFET®
Power MOSFET's in a Dual SO-8 package utilize the lastest processing
techniques to achieve extremely low on-resistance per silicon area.
Additional features of these Automotive qualified HEXFET Power
MOSFET's are a 150°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating. These benefits combine
to make this design an extremely efficient and reliable device for use in
Automotive applications and a wide variety of other applications.
The efficient SO-8 package provides enhanced thermal characteristics
and dual MOSFET die capability making it ideal in a variety of power
applications. This dual, surface mount SO-8 can dramatically reduce
board space and is also available in Tape & Reel.
G
Gate
Base part number
AUIRF7319Q
Package Type
SO-8
Standard Pack
Form
Quantity
Tape and Reel
4000
SO-8
AUIRF7319Q
D
Drain
S
Source
Orderable Part Number
AUIRF7319QTR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
V_DS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
I_S
P_D @T_A = 25°C
P_D @T_A = 70°C
E_AS
I_AR
E_AR
V_GS
dv/dt
T_J
T_STG
Parameter
Drain-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation 
Maximum Power Dissipation 
Single Pulse Avalanche Energy (Thermally Limited) 
Avalanche Current
Repetitive Avalanche Energy
Gate-to-Source Voltage
Peak Diode Recovery dv/dt 
Operating Junction and
Storage Temperature Range
Max.
N-Channel
30
P-Channel
-30
6.5
-4.9
5.2
-3.9
30
-30
2.5
-2.5
2.0
1.3
82
140
4.0
-2.8
0.20
± 20
5.0
-5.0
-55 to + 150
Units
V
A
W
mJ
A
mJ
V
V/ns
°C
Thermal Resistance
Symbol
Parameter
R_JA
Junction-to-Ambient ( PCB Mount, steady state) 
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
Typ.
–––
Max.
62.5
Units
°C/W
2015-9-30