AUIRF7316Q Datasheet, PDF (1/8 Pages) International Rectifier – Advanced Planar Technology Low On-Resistance

AUTOMOTIVE GRADE
AUIRF7316Q
Features
S1
 Advanced Planar Technology
G1
 Low On-Resistance
S2
 Logic Level Gate Drive
G2
 Dual P Channel MOSFET
 Surface Mount
 Available in Tape & Reel
 150°C Operating Temperature
 Lead-Free, RoHS Compliant
 Automotive Qualified *
Description
Specifically designed for Automotive applications, these HEXFET®
Power MOSFET's in a Dual SO-8 package utilize the lastest
processing techniques to achieve extremely low on-resistance per
silicon area. Additional features of these Automotive qualified
HEXFET Power MOSFET's are a 150°C junction operating
temperature, fast switching speed and improved repetitive avalanche
rating. These benefits combine to make this design an extremely
efficient and reliable device for use in Automotive applications and a
wide variety of other applications.
The efficient SO-8 package provides enhanced thermal characteristics
and dual MOSFET die capability making it ideal in a variety of power
applications. This dual, surface mount SO-8 can dramatically reduce
board space and is also available in Tape & Reel.
1
8
D1
2
7
D1
3
6
D2
4
5
D2
Top View
G
Gate
V_DSS
R_DS(on) typ.
max.
I_D
SO-8
AUIRF7316Q
D
Drain
-30V
0.042
0.058
-4.9A
S
Source
Base part number
AUIRF7316Q
Package Type
SO-8
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
AUIRF7316QTR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
V_DS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
I_S
P_D @T_A = 25°C
P_D @T_A = 70°C
V_GS
E_AS
I_AR
E_AR
dv/dt
T_J
T_STG
Parameter
Drain-Source Voltage
Continuous Drain Current, V_GS @ 10V 
Continuous Drain Current, V_GS @ 10V 
Pulsed Drain Current 
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation 
Maximum Power Dissipation 
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt 
Operating Junction and
Storage Temperature Range
Max.
-30
-4.9
-3.9
-30
-2.5
2.0
1.3
± 20
140
-2.8
0.20
-5.0
-55 to + 150
Units
V
A
W
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Symbol
Parameter
R_JA
Junction-to-Ambient 
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
Typ.
–––
Max.
62.5
Units
°C/W
1
2015-9-30