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| AUIRF7103Q Datasheet, PDF (1/11 Pages) International Rectifier – Advanced Planar Technology Dual N Channel MOSFET | |||
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AUTOMOTIVE GRADE
AUIRF7103Q
Features
ï· Advanced Planar Technology
ï· Dual N Channel MOSFET
ï· Low On-Resistance
ï· Logic Level Gate Drive
ï· Dynamic dv/dt Rating
ï· 175°C Operating Temperature
ï· Fast Switching
ï· Repetitive Avalanche Allowed up to Tjmax
ï· Lead-Free, RoHS Compliant
ï· Automotive Qualified *
Description
Specifically designed for Automotive applications, this cellular
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are
well known for, provides the designer with an extremely efficient
and reliable device for use in Automotive and a wide variety of
other applications.
S1
1
G1
2
S2
3
G2
4
8
D1
7
D1
6
D2
5
D2
Top View
VDSS
RDS(on) max.
ID
SO-8
AUIRF7103Q
G
Gate
D
Drain
50V
130mïï
3.0A
S
Source
Base part number
AUIRF7103Q
Package Type
SO-8
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
AUIRF7103QTR
Absolute Maximum Ratings
Stresses beyond those listed under âAbsolute Maximum Ratingsâ may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current ï
Maximum Power Dissipation ï
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited) ï
Avalanche Current ï
Repetitive Avalanche Energy ï
Peak Diode Recovery dv/dt ï
Operating Junction and
Storage Temperature Range
Max.
3.0
2.5
25
2.4
16
± 20
22
See Fig.19,20, 16b, 16c
12
-55 to + 175
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Symbol
Parameter
Rï±JL
Junction-to-Drain Lead
Rï±JA
Junction-to-Ambient ïï
Typ.
âââ
âââ
Max.
20
62.5
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
2015-9-30
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