AUIRF2804S-7P Datasheet, PDF (1/11 Pages) International Rectifier – HEXFET® Power MOSFET

AUTOMOTIVE GRADE
Features
 Advanced Process Technology
 Ultra Low On-Resistance
 175°C Operating Temperature
 Fast Switching
 Repetitive Avalanche Allowed up to Tjmax
 Lead-Free, RoHS Compliant
 Automotive Qualified *
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a
175°C junction operating temperature, fast switching
speed and improved repetitive avalanche rating . These
features combine to make this design an extremely
efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
G
Gate
AUIRF2804S-7P
HEXFET^® Power MOSFET
V_DSS
40V
R_DS(on) max.
1.6m
I_{D (Silicon Limited)}
320A
I_{D (Package Limited)}
240A
D²Pak 7 Pin
AUIRF2804S-7P
D
Drain
S
Source
Base Part Number
AUIRF2804S-7P
Package Type
D²Pak-7PIN
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Left
800
Complete Part Number
AUIRF2804S-7P
AUIRF2804S-7TRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
V_GS
E_AS
E_{AS (tested)}
I_AR
E_AR
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Package Limited)
Pulsed Drain Current 
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited) 
Single Pulse Avalanche Energy Tested Value 
Avalanche Current 
Repetitive Avalanche Energy 
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
320
230
240
1360
330
2.2
± 20
630
1050
See Fig.12a,12b,15,16
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
°C
Thermal Resistance
Symbol
R_JC
Parameter
Junction-to-Case 
R_CS
Case-to-Sink, Flat, Greased Surface
R_JA
Junction-to-Ambient
R_JA
Junction-to-Ambient (PCB Mount, steady state) 
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
Typ.
–––
0.50
–––
–––
Max.
0.50
–––
62
40
Units
°C/W
2015-11-11