AUIRF1404Z Datasheet, PDF (1/13 Pages) International Rectifier – HEXFET® Power MOSFET

AUTOMOTIVE GRADE
AUIRF1404Z
AUIRF1404ZS
AUIRF1404ZL
Features
 Advanced Process Technology
 Ultra Low On-Resistance
 175°C Operating Temperature
 Fast Switching
 Repetitive Avalanche Allowed up to Tjmax
 Lead-Free, RoHS Compliant
 Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating temperature,
fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient
and reliable device for use in Automotive applications and a wide
variety of other applications.
HEXFET^® Power MOSFET
V_DSS
40V
R_DS(on) max.
3.7m
I_{D (Silicon Limited)}
180A
I_{D (Package Limited)}
160A
D
D
S
GD
TO-220AB
AUIRF1404Z
G
Gate
S
G
D²Pak
AUIRF1404ZS
D
Drain
S
D
G
TO-262
AUIRF1404ZL
S
Source
Base part number
AUIRF1404Z
AUIRF1404ZL
AUIRF1404ZS
Package Type
TO-220
TO-262
D²-Pak
Standard Pack
Form
Tube
Tube
Tube
Tape and Reel Left
Quantity
50
50
50
800
Orderable Part Number
AUIRF1404Z
AUIRF1404ZL
AUIRF1404ZS
AUIRF1404ZSTRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_D @ T_C = 25°C
I_DM
P_D @T_C = 25°C
V_GS
E_AS
E_AS (tested)
I_AR
E_AR
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Package Limited)
Pulsed Drain Current 
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited) 
Single Pulse Avalanche Energy Tested Value 
Avalanche Current 
Repetitive Avalanche Energy 
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw 
Max.
180
120
160
710
200
1.3
± 20
330
480
See Fig.15,16, 12a, 12b
-55 to + 175
300
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
°C
Thermal Resistance
Symbol
Parameter
R_JC
R_CS
R_JA
R_JA
Junction-to-Case 
Case-to-Sink, Flat, Greased Surface 
Junction-to-Ambient 
Junction-to-Ambient ( PCB Mount, steady state) 
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
Typ.
–––
0.50
–––
Max.
0.75
–––
62
40
Units
°C/W
2015-11-11