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AUIRF1404S Datasheet, PDF (1/11 Pages) International Rectifier – HEXFET® Power MOSFET | |||
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AUTOMOTIVE GRADE
Features
ï· Advanced Planar Technology
ï· Dynamic dv/dt Rating
ï· 175°C Operating Temperature
ï· Fast Switching
ï· Fully Avalanche Rated
ï· Repetitive Avalanche Allowed up to Tjmax
ï· Lead-Free, RoHS Compliant
ï· Automotive Qualified *
Description
Specifically designed for Automotive applications, this Stripe
Planar design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient and
reliable device for use in Automotive and a wide variety of other
applications.
AUIRF1404S
AUIRF1404L
HEXFET® Power MOSFET
VDSS
RDS(on)
typ.
max.
ID (Silicon Limited)
ID (Package Limited)
40V
3.5mïï
4.0mïï
162Aï
75A
D
D
S
G
D2Pak
AUIRF1404S
S
D
G
TO-262
AUIRF1404L
G
Gate
D
Drain
S
Source
Base part number
AUIRF1404L
AUIRF1404S
Package Type
TO-262
D2-Pak
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tape and Reel Left
800
Orderable Part Number
AUIRF1404L
AUIRF1404S
AUIRF1404STRL
Absolute Maximum Ratings
Stresses beyond those listed under âAbsolute Maximum Ratingsâ may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
EAS
IAR
EAR
Dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited) ï
Continuous Drain Current, VGS @ 10V (Silicon Limited) ï
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current ïï
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited) ïï
Avalanche Current ï
Repetitive Avalanche Energy ï
Peak Diode Recovery ïï
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Thermal Resistance
Rï±JC
Rï±JA
Symbol
Parameter
Junction-to-Case ï
Junction-to-Ambient ( PCB Mount, steady state) ï
Max.
162ï
115ï
75
650
3.8
200
1.3
± 20
519
95
20
5.0
-55 to + 175
300
Typ.
âââ
Max.
0.75
40
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
2015-11-11
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