2N7002DW_14 Datasheet, PDF (1/9 Pages) Pan Jit International Inc. – 60V N-Channel Enhancement Mode MOSFET

OptiMOS^™ Small-Signal-Transistor
Features
• Dual N-channel
• Enhancement mode
• Logic level
• Avalanche rated
• Fast switching
• Qualified according to AEC Q101
• 100% lead-free; RoHS compliant
• Halogen-free according to IEC61249-2-21
2N7002DW
Product Summary
V_DS
R_DS(on),max
I_D
V_GS=10 V
V_GS=4.5 V
60 V
3W
4
0.3 A
PG-SOT363
65
4
1
23
Type
Package Tape and Reel Information
2N7002DW PG-SOT363 H6327: 3000 pcs/reel
Marking
X8s
HalogenFree Packing
Yes
Non Dry
Parameter ¹⁾
Continuous drain current
Pulsed drain current
Symbol Conditions
I_D
T _A=25 °C
T _A=70 °C
I _D,pulse T _A=25 °C
Value
Unit
0.30
A
0.24
1.2
Avalanche energy, single pulse
E _AS
I _D=0.3 A, R _GS=25 W
Reverse diode dv /dt
Gate source voltage
dv /dt
V _GS
I _D=0.3 A, V _DS=48 V,
di /dt =200 A/µs,
T _j,max=150 °C
ESD class
JESD22-A114 (HBM)
Power dissipation
P _tot
T _A=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
1) _{Remark: one of both transistors in operation.}
1.3
mJ
6
±20
class 0 (<250V)
0.5
-55 ... 150
55/150/56
kV/µs
V
W
°C
Rev.2.3
page 1
2014-09-19