C3025 Datasheet, PDF (1/2 Pages) IMP, Inc – Process C3025 CMOS 3Um 10 Volt Analog

®
ISO 9001 Registered
Process C3025
CMOS 3µm
10 Volt Analog
Electrical Characteristics
N-Channel Transistor
Threshold Voltage
Body Factor
Conduction Factor
Effective Channel Length
Width Encroachment
Punch Through Voltage
Poly Field Threshold Voltage
Symbol
VTN
γ_N
βN
LeffN
∆WN
BVDSSN
VTFP(N)
Minimum
0.65
40
3.05
16.5
12
Typical
0.85
0.87
48
3.40
0.550
T=25^oC Unless otherwise noted
Maximum
1.05
56
3.75
Unit
V
V^1/2
µA/V²
µm
µm
V
V
Comments
100x4µm
100x4µm
100x100µm
100x4µm
Per side
P-Channel Transistor
Threshold Voltage
Body Factor
Conduction Factor
Effective Channel Length
Width Encroachment
Punch Through Voltage
Poly Field Threshold Voltage
Symbol
VTP
γ_P
βP
LeffP
∆WP
BVDSSP
VTFP(P)
Minimum
–0.7
13
3.00
–16.5
–12
Typical
–0.9
0.75
16
3.35
0.8
Maximum
–1.1
19
3.70
Unit
V
V^1/2
µA/V²
µm
µm
V
V
Comments
100x4µm
100x4µm
100x100µm
100x4µm
Per side
Diffusion & Thin Films
Well (field) Sheet Resistance
N+ Sheet Resistance
N+ Junction Depth
P+ Sheet Resistance
P+ Junction Depth
Gate Oxide Thickness
Interpoly Oxide Thickness
Gate Poly Sheet Resistance
Bottom Poly Sheet Res.
Metal-1 Sheet Resistance
Passivation Thickness
Symbol
ρ_P-well(f)
ρ_N+
xjN+
ρ_P+
xjP+
TGOX
TP1P2
ρ_POLY1
ρ_POLY2
ρ_M1
TPASS
Minimum
3.25
13
50
45
56
15
15
Typical
5.25
20
0.8
80
0.7
48
66
22
22
50
200+900
Maximum
7.25
27
100
51
76
30
30
Unit
KΩ/
Ω/
µm
Ω/
µm
nm
nm
Ω/
Ω/
mΩ/
nm
Comments
P-well
oxide+nit.
Capacitance
Gate Oxide
Metal-1 to Poly-1
Metal-1 to Silicon
Poly-1 to Poly-2
Symbol
COX
CM1P
CM1S
CP1P2
Minimum
0.68
0.047
0.027
0.453
Typical
0.72
0.0523
0.30
0.523
Maximum
0.78
0.0575
0.034
0.617
Unit
fF/µm²
fF/µm²
fF/µm²
fF/µm²
Comments
© IMP, Inc.
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