C3014 Datasheet, PDF (1/2 Pages) IMP, Inc – CMOS 3mm 5 Volt Single Metal Analog

®
ISO 9001 Registered
Process C3014
CMOS 3µm
5 Volt Single Metal Analog
Electrical Characteristics
N-Channel Transistor
Threshold Voltage
Body Factor
Conduction Factor
Effective Channel Length
Width Encroachment
Punch Through Voltage
Poly Field Threshold Voltage
Symbol
VTN
γ_N
βN
LeffN
∆WN
BVDSSN
VTFP(N)
Minimum
0.5
42
2.0
12
12
Typical
0.65
0.6
47
2.3
0.7
T=25^oC Unless otherwise noted
Maximum
0.8
52
2.6
Unit
V
V^1/2
µA/V²
µm
µm
V
V
Comments
100x3µm
100x3µm
100x100µm
100x3µm
Per side
P-Channel Transistor
Threshold Voltage
Body Factor
Conduction Factor
Effective Channel Length
Width Encroachment
Punch Through Voltage
Poly Field Threshold Voltage
Symbol
VTP
γ_P
βP
LeffP
∆WP
BVDSSP
VTFP(P)
Minimum
–0.5
13
2.85
–12
–12
Typical
0.65
0.55
15
3.2
0.9
Maximum
–0.8
19
3.55
Unit
V
V^1/2
µA/V²
µm
µm
V
V
Comments
100x3µm
100x3µm
100x100µm
100x3µm
Per side
Diffusion & Thin Films
Well (field) Sheet Resistance
N+ Sheet Resistance
N+ Junction Depth
P+ Sheet Resistance
P+ Junction Depth
Gate Oxide Thickness
Interpoly Oxide Thickness
Gate Poly Sheet Resistance
Bottom Poly Sheet Res.
Metal-1 Sheet Resistance
Passivation Thickness
Symbol
ρ_P-well(f)
ρ_N+
xjN+
ρ_P+
xjP+
TGOX
TP1P2
ρ_POLY1
ρ_POLY2
ρ_M1
TPASS
Minimum
3.2
16
50
44
15
20
Typical
4.8
21
0.8
80
0.7
48
60
22
30
30
200+900
Maximum
6.5
27
100
52
30
40
60
Unit
KΩ/
Ω/
µm
Ω/
µm
nm
nm
Ω/
Ω/
mΩ/
nm
Comments
P-well
oxide+nit.
Capacitance
Gate Oxide
Metal-1 to Poly-1
Metal-1 to Silicon
Poly-1 to Poly-2
Symbol
COX
CM1P
CM1S
CP1P2
Minimum
0.66
0.026
0.51
Typical
0.72
0.0523
0.030
0.57
Maximum
0.78
0.034
0.63
Unit
fF/µm²
fF/µm²
fF/µm²
fF/µm²
Comments
© IMP, Inc.
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