C1210 Datasheet, PDF (1/4 Pages) IMP, Inc – Process C1210 CMOS 1.2mm Zero Threshold Devices

®
ISO 9001 Registered
Process C1210
CMOS 1.2µm
Zero Threshold Devices
N-Channel Transistor
Threshold Voltage
Body Factor
Conduction Factor
Effective Channel Length
Width Encroachment
Punch Through Voltage
Poly Field Threshold Voltage
Electrical Characteristics
Symbol
VTN
γ_N
βN
LeffN
∆WN
BVDSSN
VTFP(N)
Minimum
0.55
64
0.8
9
10
Typical
0.75
0.34
75
1.0
0.6
T=25^oC Unless otherwise noted
Maximum
0.95
86
1.2
Unit
V
V^1/2
µA/V²
µm
µm
V
V
Comments
100x1.2µm
100x1.2µm
100x100µm
100x1.2µm
Per side
Zero Vt N-Channel Transis.
Threshold Voltage
Body Factor
Conduction Factor
Saturation Current
Symbol
VTZLN
γ_ZLN
βZLN
IDSATZN
Minimum
0.00
75
28
Typical
0.15
0.348
90
34
Maximum
0.30
105
40
Unit
V
V^1/2
µA/V²
mA
Comments
100x100µm
100x100µm
100x100µm
100x1.5µm
P-Channel Transistor
Threshold Voltage
Body Factor
Conduction Factor
Effective Channel Length
Width Encroachment
Punch Through Voltage
Poly Field Threshold Voltage
Symbol
VTP
γ_P
βP
LeffP
∆WP
BVDSSP
VTFP(P)
Minimum
–0.7
21
0.9
–9.0
–10.0
Typical
–0.9
0.38
25
1.1
0.8
Maximum
–1.1
29
1.3
Unit
V
V^1/2
µA/V²
µm
µm
V
V
Comments
100x1.2µm
100x1.2µm
100x100µm
100x1.2µm
Per side
Zero Vt P-Channel Transis.
Threshold Voltage
Body Factor
Conduction Factor
Saturation Current
Symbol
VTZLP
γ_ZLP
βZLP
IDSATZP
Minimum
–0.3
21
–11
Typical
–0.1
0.36
26
–15
Maximum
0.1
31
–19
Unit
V
V^1/2
µA/V²
mA
Comments
100x100µm
100x100µm
100x100µm
100x1.5µm
© IMP, Inc.
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