C0810 Datasheet, PDF (1/2 Pages) IMP, Inc – CMOS 0.8mm High-Resistance Poly for Analog

®
ISO 9001 Registered
Process C0810
CMOS 0.8µm
High-Resistance Poly for Analog
N-Channel Transistor
Threshold Voltage
Body Factor
Conduction Factor
Effective Channel Length
Width Encroachment
Punch Through Voltage
Poly Field Threshold
Electrical Characteristics
Symbol
VTN
γ_N
βN
LeffN
∆WN
BVDSSN
VTFP(N)
Minimum
0.6
75
7
10
Typical
0.8
0.74
94
0.8
0.3
13
17
T=25^oC Unless otherwise noted
Maximum
1.0
115
Unit
V
V^1/2
µA/V²
µm
µm
V
V
Comments
100x0.8µm
100x0.8µm
100x100µm
100x0.8µm
Per side
P-Channel Transistor
Threshold Voltage
Body Factor
Conduction Factor
Effective Channel Length
Width Encroachment
Punch Through Voltage
Poly Field Threshold Voltage
Symbol
VTP
γ_P
βP
LeffP
∆WP
BVDSSP
VTFP(P)
Minimum
– 0.7
25
–7
–10
Typical
– 0.9
0.57
31
0.85
0.4
–12
–17
Maximum
–1.1
37
Unit
V
V^1/2
µA/V²
µm
µm
V
V
Comments
100x0.8µm
100x0.8µm
100x100µm
100x0.8µm
Per side
Diffusion & Thin Films
Well (field) Sheet Resistance
N+ Sheet Resistance
N+ Junction Depth
P+ Sheet Resistance
P+ Junction Depth
Gate Oxide Thickness
Field Oxide Thickness
Bottom Poly Sheet Res.
Gate Poly Sheet Resistance
Metal-1 Sheet Resistance
Metal-2 Sheet Resistance
Passivation Thickness
High Resistance Poly
Symbol
ρ_N-well(f)
ρ_N+
xjN+
ρ_P+
xjP+
TGOX
TFIELD
ρ_POLY1
ρ_POLY2
ρ_M1
ρ_M2
TPASS
ρ_HI-POLY
Minimum
0.50
45
68
15
15
40
20
1.5
Typical
0.65
60
0.25
90
0.4
17.5
700
23
23
60
30
200+900
2.0
Maximum
0.80
75
112
32
32
80
40
2.5
Unit
KΩ/
Ω/
µm
Ω/
µm
nm
nm
Ω/
Ω/
mΩ/
mΩ/
nm
KΩ/
Comments
n-well
oxide+nit.
Capacitance
Gate Oxide
Metal-1 to Poly1
Metal-1 to Silicon
Metal-2 to Metal-1
Poly-1 to Poly-2
Symbol
COX
CM1P
CM1S
CMM
CPP
Minimum
0.69
Typical
1.97
0.046
0.028
0.038
0.822
Maximum
1.015
Unit
fF/µm²
fF/µm²
fF/µm²
fF/µm²
fF/µm²
Comments
© IMP, Inc.
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