GI750 Datasheet, PDF (1/4 Pages) General Semiconductor – HIGH CURRENT PLASTIC RECTIFIER

GI750 thru GI758
Vishay General Semiconductor
High Current Axial Plastic Rectifier
P600
PRIMARY CHARACTERISTICS
I_F(AV)
6.0 A
V_RRM
50 V to 800 V
I_FSM
400 A
V_F
0.9 V, 0.95 V
I_R
5.0 μA
T_J max.
150 °C
FEATURES
• Low forward voltage drop
• Low leakage current, I_R less than 0.1 μA
• High forward current capability
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters and freewheeling diodes application.
Note
• These devices are not AEC-Q101 qualified.
MECHANICAL DATA
Case: P600, void-free molded epoxy body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL GI750
Maximum repetitive peak reverse voltage
V_RRM
50
Maximum RMS voltage
V_RMS
35
Maximum DC blocking voltage
V_DC
50
Maximum non-repetitive peak reverse voltage
V_RSM
60
Maximum average
forward rectified
current at
T_A = 60 °C, P.C.B. mounting (fig. 1)
T_L = 60 °C,0.125" (3.18 mm)
lead length (fig. 2)
I_F(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I_FSM
Operating junction and storage temperature range
T_J, T_STG
GI751
100
70
100
120
GI752 GI754
200
400
140
280
200
400
240
480
6.0
22
400
- 50 to + 150
GI756
600
420
600
720
GI758
800
560
800
1200
UNIT
V
V
V
V
A
A
°C
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL GI750 GI751 GI752 GI754
Maximum instantaneous
forward voltage at
6.0 A
100 A
V_F
0.90
1.25
Maximum DC reverse current
at rated DC blocking voltage
T_A = 25 °C
T_A = 100 °C
I_R
5.0
1.0
Typical reverse recovery time
I_F = 0.5 A, I_R = 1.0 A,
I_rr = 0.25 A
t_rr
2.5
Typical junction capacitance 4.0 V, 1 MHz
C_J
150
GI756
GI758
0.95
1.30
UNIT
V
μA
mA
μs
pF
Document Number: 88627 For technical questions within your region, please contact one of the following:
Revision: 28-Oct-09
[e-mail], [e-mail], [e-mail]
www.vishay.com
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