SL1002 Datasheet, PDF (1/4 Pages) IK Semicon Co., Ltd – Low Speed Switching

TECHNICAL DATA
Audio Frequency Power Amplifier
Features
● Low Speed Switching
SOT-223
SL1002
Emitter Collector Base
1
2
3
SL1002
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Tc=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current (DC)
ICP
*Collector Current (Pulse)
IB
Base Current (DC)
PC
Collector Dissipation (TC=25°C)
Rθja
Junction to Ambient
Rθjc
Junction to Case
TJ
Junction Temperature
TSTG
Storage Temperature
* PW≤10ms, Duty Cycle≤50%
Value
40
30
5
3
7
0.6
10
132
13.5
150
- 55 ~ 150
Units
V
V
V
A
A
A
W
°C/W
°C/W
°C
°C
Electrical Characteristics Tc=25°C unless otherwise noted
Characteristics
DC Current Gain (1), (2)
DC Current Gain (1), (2)
Symbol
h_FE
h_FE
Unit
Measurement Mode
V_ce =2V, I_c =20mA
V_ce = 2V, I_c = 1A
Collector Cut-off Current
I_cbo
μA V_cb = 30V, I_e = 0
Collector Cut-off Current
I_cbo
μA V_cb = 40V, I_e = 0
Emitter Cut-off Current
I_ebo
μA V_eb = 3V, I_c = 0
Emitter Cut-off Current
I_ebo
μA V_eb = 5V, I_c = 0
Collector-Emitter
Saturation Voltage (1)
V_{ce (sat)}
Ic = 2A, Ib = 0.2A
V
Ic = 0.8 A, Ib = 0.02 A
Base-Emitter
Saturation Voltage (1)
V_{be (sat)}
V
Ic = 2A, Ib = 0.2A
(1) Pulse Test : Pulse Width ≤ 300㎲. Duty Cycle ≤ 2%
(2) Measurement mode for a network with common base : Vcb = 1V, Ie=Ic
Min Max
30
60
400
1.0
100
1.0
100
0.5
0.1
2.0
* Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device.
These are stress ratings only and functional operation of the device at these or any other conditions beyond those
indicated under “recommended operating conditions” is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
2011, February, Rev. 01