SL1001 Datasheet, PDF (1/5 Pages) IK Semicon Co., Ltd – Low Speed Switching

TECHNICAL DATA
Audio Frequency Power Amplifier
Features
● Low Speed Switching
SOT-223
SL1001
Emitter Collector Base
1
2
3
SL1001
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Tc=25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
- 40
V
VCEO
Collector-Emitter Voltage
- 30
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current (DC)
-3
A
ICP
*Collector Current (Pulse)
-7
A
IB
Base Current (DC)
- 0.6
A
PC
Collector Dissipation
(TC=25°C)
10
W
Rθja
Junction to Ambient
132
°C/W
Rθjc
Junction to Case
13.5
°C/W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 ~ 150
°C
* PW≤10ms, Duty Cycle≤50%
* Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device.
These are stress ratings only and functional operation of the device at these or any other conditions beyond those
indicated under “recommended operating conditions” is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
Electrical Characteristics Tc=25°C unless otherwise noted
Characteristics
DC Current Gain (1), (2)
DC Current Gain (1), (2)
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Emitter Cut-off Current
Collector-Emitter
Saturation Voltage (1)
Base-Emitter
Saturation Voltage (1)
Symbol
h_FE
h_FE
I_cbo
I_cbo
I_ebo
I_ebo
V_{ce (sat)}
V_{be (sat)}
Unit
μA
μA
μA
μA
Measurement Mode
V_ce =2V, I_c =20mA
V_ce = 2V, I_c = 1A
V_cb = 30V, I_e = 0
V_cb = 40V, I_e = 0
V_eb = 3V, I_c = 0
V_eb = 5V, I_c = 0
Ic = 2 A, Ib = 0.2 A
Ic = 0.8 A, Ib = 0.02 A
Ic = 2 A, Ib = 0.2 A
(1) Pulse Test : Pulse Width ≤ 300㎲. Duty Cycle ≤ 2%
(2) Measurement mode for a network with common base : Vcb = 1V, Ie=Ic
Min Max
30
60 400
1.0
100
1.0
100
0.5
0.1
2.0
2011, February, Rev. 01