IDT70T633 Datasheet, PDF (8/27 Pages) Integrated Device Technology – HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE

IDT70T633/1S
High-Speed 2.5V 512/256K x 18 Asynchronous Dual-Port Static RAM
Preliminary
Industrial and Commercial Temperature Ranges
Recommended Operating
Temperature and Supply Voltage⁽¹⁾
Grade
Ambient
Temperature
GND
VDD
Commercial
0^OC to +70^OC
0V 2.5V + 100mV
Industrial
-40^OC to +85^OC
0V
2.5V + 100mV
NOTE:
5670 tbl 04
1. This is the parameter TA. This is the "instant on" case temperature.
Recommended DC Operating
Conditions with VDDQ at 2.5V
Symbol
Parameter
Min. Typ.
Max.
Unit
VDD Core Supply Voltage
2.4
2.5
2.6
V
VDDQ I/O Supply Voltage⁽³⁾
2.4
2.5
2.6
V
VSS Ground
0
0
0
V
Input High Volltage
VIH (Address, Control &
Data I/O Inputs)⁽³⁾
1.7
____ _{VDDQ + 100mV}(2) _V
VIH
Input High Voltage ^_
JTAG
1.7
____ _{VDD + 100mV}(2)
V
Absolute Maximum Ratings⁽¹⁾
Symbol
Rating
Commercial
Unit
& Industrial
VIH
Input High Voltage -
ZZ, OPT, M/S
VDD - 0.2V ^____ VDD + 100mV⁽²⁾ V
VIL Input Low Voltage
-0.3⁽¹⁾
____
0.7
V
VIL
Input Low Voltage -
ZZ, OPT, M/S
-0.3⁽¹⁾
____
0.2
V
VTERM
VDD Terminal Voltage
-0.5 to 3.6
V
5670 tbl 05
(VDD)
with Respect to GND
NOTES:
VTERM⁽²⁾
(VDDQ)
VDDQ Terminal Voltage
with Respect to GND
1. VIL (min.) = -1.0V for pulse width less than tRC/2 or 5ns, whichever is less.
-0.3 to VDDQ + 0.3
V
2. VIH (max.) = VDDQ + 1.0V for pulse width less than tRC/2 or 5ns, whichever is
less.
VTERM⁽²⁾
Input and I/O Terminal
-0.3 to VDDQ + 0.3
V
3. To select operation at 2.5V levels on the I/Os and controls of a given port, the
(INPUTS and I/O's) Voltage with Respect to GND
OPT pin for that port must be set to VSS (0V), and VDDQX for that port must be
supplied as indicated above.
TBIAS⁽³⁾
Temperature
-55 to +125
o_C
Under Bias
TSTG
Storage
Temperature
-65 to +150
o_C
TJN
Junction Temperature
+150
o_C
IOUT(For VDDQ = 3.3V) DC Output Current
50
mA
IOUT(For VDDQ = 2.5V) DC Output Current
40
mA
5670 tbl 07
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. This is a steady-state DC parameter that applies after the power supply has
reached its nominal operating value. Power sequencing is not necessary;
however, the voltage on any Input or I/O pin cannot exceed VDDQ during power
supply ramp up.
3. Ambient Temperature under DC Bias. No AC Conditions. Chip Deselected.
Recommended DC Operating
Conditions with VDDQ at 3.3V
Symbol
Parameter
Min. Typ.
Max.
Unit
VDD Core Supply Voltage
2.4
2.5
2.6
V
VDDQ I/O Supply Voltage⁽³⁾
3.15
3.3
3.45
V
VSS Ground
0
0
0
V
Input High Voltage
VIH (Address, Control
&Data I/O Inputs)⁽³⁾
VIH
Input High Voltage ^_
JTAG
2.0
____ _{VDDQ + 150mV}(2) _V
1.7
____ _{VDD + 100mV}(2) _V
VIH
Input High Voltage -
ZZ, OPT, M/S
VIL Input Low Voltage
VDD - 0.2V ^____ VDD + 100mV⁽²⁾ V
-0.3⁽¹⁾
____
0.8
V
Capacitance⁽¹⁾
(TA = +25°C, F = 1.0MHZ) TQFP ONLY
Symbol
Parameter
Conditions⁽²⁾ Max. Unit
CIN Input Capacitance
COUT⁽³⁾ Output Capacitance
VIN = 3dV
VOUT = 3dV
8 pF
10.5 pF
NOTES:
5670 tbl 08
1. These parameters are determined by device characterization, but are not
production tested.
2. 3dV references the interpolated capacitance when the input and output switch
from 0V to 3V or from 3V to 0V.
3. COUT also references CI/O.
VIL
Input Low Voltage -
ZZ, OPT, M/S
-0.3⁽¹⁾
____
0.2
V
5670 tbl 06
NOTES:
1. VIL (min.) = -1.0V for pulse width less than tRC/2 or 5ns, whichever is less.
2. VIH (max.) = VDDQ + 1.0V for pulse width less than tRC/2 or 5ns, whichever is
less.
3. To select operation at 3.3V levels on the I/Os and controls of a given port, the
OPT pin for that port must be set to VDD (2.5V), and VDDQX for that port must be
supplied as indicated above.
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