ZSSC5101 Datasheet, PDF (6/28 Pages) Integrated Device Technology – xMR Sensor Signal Conditioner

ZSSC5101 Datasheet
Parameter
1.2.1.17. _{Common mode input voltage range}
1.2.1.18. _{Waiting time after enabling EEPROM charge pump}
clock
1) RTHJA = 160 K/W assumed.
2) With reduced performance.
Symbol
CMR
tVPP-RISE
Min
30%
1
Typ. Max
70%
1.3. Electrical Parameters
The following electrical specifications are valid for the operating conditions as specified in table 1.2
(T_A = -40°C to 160°C).
1.3.1. ZSSC5101 Characteristics
Table 1.3 Electrical Characteristics
Parameter
Symbol
Min
1.3.1.1. _{Leakage current at VSINP, VSINN, VCOSP, and}
VCOSN pins
IIN-LEAK
1.3.1.2. _{Leakage current at VOUT in high-impedance state IOUT-LEAK}
-12
1.3.1.3. _{Leakage current difference Vsinp/n, Vcosp/n} ¹⁾
IIN-DIFF-LEAK
1.3.1.4. _{Current consumption}
1.3.1.5. _{Peak current consumption at startup} ^{1) 2)}
ISUPPLY
IPEAK
1.3.1.6. _{Sensor supply voltage}
VDDS
3.8
1.3.1.7. _{Internal digital master clock frequency}
(after calibration)
fDIGITAL
1.5
1) Maximum characterized on samples, not measured in production.
2) ZSSC5101 can start with such a peak current for ramps of the power supply with a rise-up time > 100 µs.
Typ.
4
1.6
Max
1
+12
35
7
10
4.2
1.8
Unit
VDDE
ms
Unit
µA
µA
nA
mA
mA
V
MHz
© 2016 Integrated Device Technology, Inc.
6
January 22, 2016