 English |
|
|
|
|
|
|
|
| ICS844002-01 Datasheet, PDF (4/15 Pages) Integrated Device Technology – FEMTOCLOCKS™ CRYSTAL-TOLVDS FREQUENCY SYNTHESIZER | |||
| |||
| ◁ |
ICS844002-01
FEMTOCLOCKS⢠CRYSTAL-TO-LVDS FREQUENCY SYNTHESIZER
Table 3C. LVCMOS/LVTTL DC Characteristics, VDD = VDDO = 3.3V ± 5% or 2.5V ± 5%, TA = 0°C to 70°C
Symbol Parameter
Test Conditions
Minimum Typical Maximum
VIH
Input High Voltage
VIL
Input Low Voltage
3.465V
2
2.625V
1.7
3.465V
-0.3
2.625V
-0.3
VDD + 0.3
VDD + 0.3
0.8
0.7
IIH
Input High Current
REF_CLK, MR,
FSEL0, FSEL1,
PLL_SEL, XTAL_SEL
VDD = VIN = 3.465V or
2.625V
150
IIL
Input Low Current
REF_CLK, MR,
FSEL0, FSEL1,
PLL_SEL, XTAL_SEL
VDD = 3.465V or 2.625V,
VIN = 0V
-5
Units
V
V
V
V
µA
µA
Table 3D. LVDS DC Characteristics, VDD = VDDO = 3.3V ± 5%, TA = 0°C to 70°C
Symbol Parameter
Test Conditions
Minimum
VOD
Differential Output Voltage
300
âVOD
VOD Magnitude Change
VOS
Offset Voltage
1.3
âVOS
VOS Magnitude Change
Typical
40
1.5
50
Maximum
600
1.7
Units
mV
mV
V
mV
Table 3E. LVDS DC Characteristics, VDD = VDDO = 2.5V ± 5%, TA = 0°C to 70°C
Symbol Parameter
Test Conditions
Minimum
VOD
Differential Output Voltage
240
âVOD
VOD Magnitude Change
VOS
Offset Voltage
0.7
âVOS
VOS Magnitude Change
Typical
40
1.1
50
Maximum
550
1.5
Units
mV
mV
V
mV
Table 4. Crystal Characteristics
Parameter
Mode of Oscillation
Frequency
Equivalent Series Resistance (ESR)
Shunt Capacitance
Drive Level
Test Conditions
Minimum Typical Maximum
Fundamental
22.4
25
27.2
50
7
1
Units
MHz
â¦
pF
mW
IDT⢠/ ICS⢠LVDS FREQUENCY SYNTHESIZER
4
ICS844002AG-01 REV. A SEPTEMBER 28, 2007
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese