ZSPM9060 Datasheet, PDF (1/30 Pages) Integrated Device Technology – Ultra-Compact, High-Performance High-Frequency DrMOS Device

Ultra-Compact, High-Performance,
High-Frequency DrMOS Device
ZSPM9060
Datasheet
Brief Description
The ZSPM9060 is IDT’s next-generation, fully
optimized, ultra-compact, integrated MOSFET plus
driver power stage solution for high-current, high-
frequency, synchronous buck DC-DC applications.
The ZSPM9060 integrates a driver IC, two power
MOSFETs, and a bootstrap Schottky diode into a
thermally enhanced, ultra-compact 6x6mm package.
With an integrated approach, the complete switching
power stage is optimized with regard to driver and
MOSFET dynamic performance, system inductance,
and power MOSFET R_DS(ON). The ZSPM9060 uses
innovative high-performance MOSFET technology,
which dramatically reduces switch ringing,
eliminating the need for a snubber circuit in most
buck converter applications.
A driver IC with reduced dead times and propagation
delays further enhances the performance. A thermal
warning function warns of a potential over-tempera-
ture situation. The ZSPM9060 also provides a Skip
Mode (SMOD#) for improved light-load efficiency. It
also provides a tri-state 3.3V PWM input for
compatibility with a wide range of PWM controllers.
The ZSPM9060 DrMOS is compatible with IDT’s
ZSPM1000, a leading-edge configurable digital
power-management system controller for non-iso-
lated point-of-load (POL) supplies.
Benefits
• Fully optimized system efficiency: >93% peak
• Clean switching waveforms with minimal ringing
• 72% space-saving compared to conventional
discrete solutions
• High current handling
• Optimized for use with IDT’s ZSPM1000 true
digital PWM controller
Available Support
• ZSPM8060-KIT: Open-Loop Evaluation Board
for ZSPM9060
Physical Characteristics
• Operation temperature: -40°C to +125°C
• V_IN: 3V to 16V (typical 12V)
• I_OUT: up to 60A
• Low-profile SMD package: 6mmx6mm PQFN40
• IDT green packaging and RoHS compliant
Typical Application
Features
• Based on the Intel® 4.0 DrMOS standard
• High-current handling: up to 60A
• High-performance PQFN copper-clip package
• Tri-state 3.3V PWM input driver
• Skip Mode (low-side gate turn-off) input (SMOD#)
• Warning flag for over-temperature conditions
• Driver output disable function (DISB# pin)
• Internal pull-up and pull-down for SMOD# and
DISB# inputs, respectively
• Integrated Schottky diode technology in the
low-side MOSFET
• Integrated bootstrap Schottky diode
• Adaptive gate drive timing for shoot-through
protection
• Under-voltage lockout (UVLO)
• Optimized for switching frequencies ≤ 1MHz
© 2016 Integrated Device Technology, Inc.
1
January 27, 2016