ZSPM9000 Datasheet, PDF (1/28 Pages) List of Unclassifed Manufacturers – Ultra-Compact, High-Performance DrMOS Device

Ultra-Compact, High-Performance
DrMOS Device
ZSPM9000
Datasheet
Brief Description
The ZSPM9000 DrMOS is a fully optimized, ultra-
compact, integrated MOSFET plus driver power-
stage solution for high-current, high-frequency,
synchronous buck DC-DC applications. The device
incorporates a driver IC, two power MOSFETs, and
a bootstrap Schottky diode in a thermally enhanced,
ultra-compact 6mmx6mm PQFN40 package.
With an integrated approach, the ZSPM9000’s com-
plete switching power stage is optimized for driver
and MOSFET dynamic performance, system induc-
tance, and power MOSFET R_DS(ON). It uses innova-
tive high-performance MOSFET technology, which
dramatically reduces switch ringing, eliminating the
snubber circuit in most buck converter applications.
An innovative driver IC with reduced dead times and
propagation delays further enhances performance.
An internal 12V to 5V linear regulator enables the
ZSPM9000 to operate from a single 12V supply. A
thermal warning function (THWN) warns of potential
over-temperature situations. The ZSPM9000 also
incorporates features such as Skip Mode (SMOD)
for improved light-load efficiency and a tri-state 3.3V
pulse-width modulation (PWM) input for compatibility
with a wide range of PWM controllers.
The ZSPM9000 DrMOS is ideally compatible with
IDT’s ZSPM1000, a leading-edge configurable digital
power-management system controller for non-
isolated point-of-load (POL) supplies.
Benefits
• Fully optimized system efficiency: >93% peak
• Clean switching waveforms with minimal ringing
• 72% space-saving compared to conventional
discrete solutions
• Ideally compatible with IDT’s ZSPM1000 true
digital PWM controller
Features
• Based on the Intel® 4.0 DrMOS standard
• Internal 12V to 5V linear regulator (LDO)
• High-current handling: up to 50A
• High-performance copper-clip package
• Tri-state 3.3V PWM input driver
• Skip Mode (low-side gate turn off) input (SMOD#)
• Warning flag for over-temperature conditions
• Driver output disable function (DISB# pin)
• Internal pull-up and pull-down for SMOD# and
DISB# inputs, respectively
• Integrated Schottky diode technology in the
low-side MOSFET
• Integrated bootstrap Schottky diode
• Adaptive gate drive timing for shoot-through
protection
• Under-voltage lockout (UVLO)
• Optimized for switching frequencies up to 1MHz
Available Support
• ZSPM8000-KIT: Closed Loop Evaluation Kit
combined for the ZSPM9000 and ZSPM1000
Physical Characteristics
• Operation temperature: -40°C to +125°C
• V_IN: 8V to 15V (typical 12V)
• I_OUT: 40A (average), 50A (maximum)
• Low-profile SMD package: 6mmx6mm PQFN40
• IDT green packaging and RoHS compliant
Typical Application
© 2016 Integrated Device Technology, Inc.
1
January 27, 2016