IDTQS3VH16212 Datasheet, PDF (1/8 Pages) Integrated Device Technology – QUICKSWITCH PRODUCTS 2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH

IDTQS3VH16212
2.5V / 3.3V 24-BIT BUS EXCHANGE HIGH BANDWIDTH BUS SWITCH
INDUSTRIAL TEMPERATURE RANGE
QUICKSWITCH^® PRODUCTS
2.5V / 3.3V 24-BIT BUS
EXCHANGE HIGH BANDWIDTH
BUS SWITCH
IDTQS3VH16212
FEATURES:
• N channel FET switches with no parasitic diode to Vcc
− Isolation under power-off conditions
− No DC path to Vcc or GND
− 5V tolerant in OFF and ON state
• 5V tolerant I/Os
• Low RON - 4Ω typical
• Flat RON characteristics over operating range
• Rail-to-rail switching 0 - 5V
• Bidirectional dataflow with near-zero delay: no added ground
bounce
• Excellent RON matching between channels
• Vcc operation: 2.3V to 3.6V
• High bandwidth - up to 500 MHz
• LVTTL-compatible control Inputs
• Undershoot Clamp Diodes on all switch and control Inputs
• Low I/O capacitance, 4pF typical
• Available in SSOP and TSSOP packages
DESCRIPTION:
The QS3VH16212 Bus Exchange HotSwitch with 24-bits is a high
bandwidth bus switch. The QS3VH16212 has very low ON resistance,
resulting in under 250ps propagation delay through the switch. The device
operates as a 24-bit bus switch or a 12-bit bus exchanger, which provides
data exchanging between the four signal ports through the data-select (S0
- S2) terminals. In the OFF and ON states, the switches are 5V-tolerant. In
the OFF state, the switches offer very high impedence at the terminals.
The combination of near-zero propagation delay, high OFF impedance,
and over-voltage tolerance makes the QS3VH16212 ideal for high perfor-
mance communications applications.
The QS3VH16212 is characterized for operation from -40°C to +85°C.
APPLICATIONS:
• Hot-swapping
• 10/100 Base-T, Ethernet LAN switch
• Low distortion analog switch
• Replaces mechanical relay
• ATM 25/155 switching
FUNCTIONAL BLOCK DIAGRAM
1 of 12 Channels
1A1
1B1
1A2
1B2
Flow Control
S0
S1
S2
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
INDUSTRIAL TEMPERATURE RANGE
1
c 2002 Integrated Device Technology, Inc.
MARCH 2002
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