IDTHS421V16 Datasheet, PDF (1/12 Pages) Integrated Device Technology – LOW POWER, DUAL SIM CARD HYBRID SWITCH

LOW POWER, DUAL SIM CARD HYBRID SWITCH
PRELIMINARY DATASHEET
IDTHS421V16
Description
The IDTHS421V16 is a bi-directional, low power, Quad
single-pole, double-throw (SPDT) hybrid switch targeted at
dual SIM card multiplexing. It is optimized for switching the
WLAN-SIM data and control signals and dedicates one
channel as a supply-source switch.
This device is compatible with the requirements of SIM
cards and features a low on capacitance (C_ON) of 10 pF to
ensure high-speed data transfer. The V_SIM switch path has
a low R_ON characteristic to insure minimal voltage drop in
the dual SIM card supply paths.
The IDTHS421P16 contains special circuitry that minimizes
current consumption when the control voltage applied to the
SEL pin is lower than the supply voltage (VCC). This feature
is especially valuable in ultra-portable applications, such as
cell phones; allowing direct interface with the general
purpose I/Os of the baseband processor. Other applications
include switching and connector sharing in portable cell
phones, PDAs, digital cameras, printers, and notebook
computers.
Features
• Low On Capacitance for data path: 10 pF typical
• Low On Resistance for data path: 10Ω typical
• Low On Resistance for supply path: 0.4Ω typical
• Low power consumption: 1 µA maximum
– 15 µA maximum I_CCT over expanded voltage range
(V_IN = 1.8 V, VCC = 4.3 V)
• Wide -3dB bandwidth: >160 MHz
• Available in 16-pin QFN package – RoHS compliant
• 8 kV ESD rating, >16kV power/ground ESD rating
Applications
• Cell phones, PDAs, Digital cameras, and Notebooks
• LCD monitors, TV, and Set-top boxes
Analog Symbol
1V_SIM
2V_SIM
1RST
2RST
1CLK
2CLK
1DAT
2DAT
V_SIM
RST
CLK
DAT
Sel
IDT™ LOW POWER, DUAL SIM CARD HYBRID SWITCH
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IDTHS421V16 REV B 012908