IDT74LVC541A Datasheet, PDF (1/6 Pages) Integrated Device Technology – 3.3V CMOS OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS AND 5 VOLT TOLERANT I/O

IDT74LVC541A
3.3V CMOS OCTAL BUFFER/DRIVER WITH 3-STATE OUTPUTS
3.3V CMOS OCTAL
BUFFER/DRIVER
WITH 3-STATE OUTPUTS
AND 5 VOLT TOLERANT I/O
INDUSTRIAL TEMPERATURE RANGE
IDT74LVC541A
FEATURES:
• 0.5 MICRON CMOS Technology
• ESD > 2000V per MIL-STD-883, Method 3015; > 200V using
machine model (C = 200pF, R = 0)
• VCC = 3.3V ± 0.3V, Normal Range
• VCC = 2.7V to 3.6V, Extended Range
• CMOS power levels (0.4µ W typ. static)
• Rail-to-rail output swing for increased noise margin
• All inputs, outputs, and I/O are 5V tolerant
• Supports hot insertion
• Available in SOIC, SSOP, QSOP, and TSSOP packages
DRIVE FEATURES:
• High Output Drivers: ±24mA
• Reduced system switching noise
DESCRIPTION:
The LVC541A octal buffer/driver is built using advanced dual metal CMOS
technology. This device is ideal for driving bus lines or buffer memory
address registers. This device features inputs and outputs on opposite sides
of the package that facilitate printed circuit board layout. The 3-state control
gate is a 2-input AND gate with active-low inputs so that if either output enable
(OE1 or OE2) input is high, all eight outputs are in the high-impedance state.
The LVC541A has been designed with a ±24mA output driver. This driver
is capable of driving a moderate to heavy load while maintaining speed
performance.
To ensure the high-impedance state during power up or power down, OE
should be tied to VCC through a pullup resistor; the minimum value of the
resistor is determined by the current-sinking capability of the driver.
Inputs can be driven from either 3.3V or 5V devices. This feature allows
the use of this device as a translator in a mixed 3.3V/5V system environment.
APPLICATIONS:
• 5V and 3.3V mixed voltage systems
• Data communication and telecommunication systems
FUNCTIONAL BLOCK DIAGRAM
OE1 ¹
OE2 ¹⁹
A1 ²
18 _Y1
TO SEVEN OTHER CHANNELS
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
INDUSTRIAL TEMPERATURE RANGE
1
© 1999 Integrated Device Technology, Inc.
DECEMBER 1999
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