IDT6116SA_14 Datasheet, PDF (1/11 Pages) Integrated Device Technology – High-speed access and chip select times

CMOS Static RAM
16K (2K x 8-Bit)
IDT6116SA
IDT6116LA
Features
◆ _{High-speed access and chip select times}
– Military: 20/25/35/45/55/70/90/120/150ns (max.)
– Industrial: 20/25ns (max.)
– Commercial: 15/20/25ns (max.)
◆ _{Low-power consumption}
◆ _{Battery backup operation}
– 2V data retention voltage (LA version only)
◆ _{Produced with advanced CMOS high-performance}
technology
◆ _{CMOS process virtually eliminates alpha particle soft-error}
rates
◆ _{Input and output directly TTL-compatible}
◆ _{Static operation: no clocks or refresh required}
◆ _{Available in ceramic 24-pin DIP, ceramic and plastic 24-pin Thin}
Dip and 24-pin SOIC
◆ _{Military product compliant to MIL-STD-833, Class B}
Description
The IDT6116SA/LA is a 16,384-bit high-speed static RAM organized
as 2K x 8. It is fabricated using high-performance, high-reliability CMOS
technology.
Access times as fast as 15ns are available. The circuit also offers a
reduced power standby mode. When CS goes HIGH, the circuit will
automatically go to, and remain in, a standby power mode, as long as CS
remains HIGH. This capability provides significant system level power and
cooling savings. The low-power (LA) version also offers a battery backup
data retention capability where the circuit typically consumes only 1µW to
4µW operating off a 2V battery.
All inputs and outputs of the IDT6116SA/LA are TTL-compatible. Fully
static asynchronous circuitry is used, requiring no clocks or refreshing for
operation.
The IDT6116SA/LA is packaged in 24-pin 300mil plastic DIP, 24-pin
600mil and 300mil ceramic DIP, or 24-lead gull-wing SOIC providing high
board-level packing densities.
Military grade product is manufactured in compliance to MIL-STD-883,
Class B, making it ideally suited to military temperature applications
demanding the highest level of performance and reliability.
Functional Block Diagram
A0
A10
I/O0
I/O7
CS
OE
WE
ADDRESS
DECODER
INPUT
DATA
CIRCUIT
CONTROL
CIRCUIT
128 X 128
MEMORY
ARRAY
I/O CONTROL
VCC
GND
,
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©2013 Integrated Device Technology, Inc.
FEBRUARY 2013
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