ICS3726-02 Datasheet, PDF (5/6 Pages) Integrated Circuit Systems – HIGH PERFORMANCE VCXO

PRELIMINARY INFORMATION
ICS3726-02
HIGH PERFORMANCE VCXO
DC Electrical Characteristics
VDD=3.3 V ±5% , Ambient temperature 0 to +70°C, unless stated otherwise
Parameter
Symbol Conditions
Min. Typ.
Operating Voltage
VDD
3.15
Output High Voltage
Output Low Voltage
Output High Voltage (CMOS
Level)
V_OH
V_OL
V_OH
I_OH = -12 mA
I_OL = 12 mA
I_OH = -4 mA
2.4
VDD-0.4
Operating Supply Current
IDD No load
6
Short Circuit Current
I_OS
VIN, VCXO Control Voltage
V_IA
±50
0
Max.
3.45
0.4
Units
V
V
V
V
mA
mA
3.3
V
AC Electrical Characteristics
VDD = 3.3 V ±5%, Ambient Temperature 0 to +70° C, unless stated otherwise
Parameter
Symbol
Conditions
Min. Typ. Max. Units
Output Frequency
F_O
Crystal Pullability
20
52 MHz
VCXO Gain
F_P
0V< VIN < 3.3 V, Note 1
+ 200
ppm
VIN = VDD/2 + 1 V, Note 1
150
ppm/V
Output Rise Time
Output Fall Time
Output Clock Duty Cycle
Period Jitter RMS
Period Jitter P- P
Integrated Jitter RMS
t_OR 0.8 to 2.0 V, C_L=15 pF
1.5 ns
t_OF 2.0 to 0.8 V, C_L=15 pF
1.5 ns
t_D
Measured at 1.4 V, C_L=15 pF 40
50 60
%
t_J
C_L=15 pF @35.328 MHz
6.7
ps
t_J
C_L=15 pF@35.328 MHz
46
ps
Integrated 12 kHz to 20 MHz
1
ps
@ 35.328 MHz
Phase Noise relative to
Carrier
@35.328 MHz Carrier
frequency
@10 Hz
-65
dBc/Hz
@100 Hz
-90
dBc/Hz
@1 kHz
-120
dBc/Hz
@10 kHz
-140
dBc/Hz
@100 kHz
-147
dBc/Hz
@1 MHz
-147
dBc/Hz
Note 1: External crystal device must conform with Pullable Crystal Specifications listed on page 3.
MDS 3726-02 B
5
Revision 120505
Integrated Circuit Systems ● 525 Race Street, San Jose, CA 95126 ● tel [phone] ● www.icst.com