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ICS840-77 Datasheet, PDF (3/9 Pages) Integrated Circuit Systems – 77.76MHZ, LVCMOS/LVTTL OSCILLATOR REPLACEMENT
Integrated
Circuit
Systems, Inc.
PRELIMINARY
ICS840-77
77.76MHZ, LVCMOS/LVTTL
OSCILLATOR REPLACEMENT
ABSOLUTE MAXIMUM RATINGS
Supply Voltage, VDD
4.6V
Inputs, VI
-0.5V to VDD + 0.5 V
Outputs, VO
-0.5V to VDDO + 0.5V
Package Thermal Impedance, θJA
8 Lead TSSOP
101.7°C/W (0 mps)
8 Lead SOIC
112.7°C/W (0 lfpm)
Storage Temperature, TSTG
-65°C to 150°C
NOTE: Stresses beyond those listed under Absolute
Maximum Ratings may cause permanent damage to the
device. These ratings are stress specifications only. Func-
tional operation of product at these conditions or any condi-
tions beyond those listed in the DC Characteristics or AC
Characteristics is not implied. Exposure to absolute maxi-
mum rating conditions for extended periods may affect prod-
uct reliability.
TABLE 4A. POWER SUPPLY DC CHARACTERISTICS, VDD = VDDO = 3.3V±0.3V, TA = 0°C TO 70°C
Symbol Parameter
Test Conditions
Minimum
VDD
Power Supply Voltage
3.0
V
Output Supply Voltage
3.0
DDO
IDD
Power Supply Current
OE = VDD (output enabled)
IDDO
Output Supply Current
Typical
3.3
3.3
TBD
TBD
Maximum
3.6
3.6
Units
V
V
mA
TABLE 4B. LVCMOS/LVTTL DC CHARACTERISTICS, VDD = VDDO = 3.3V±0.3V, TA = 0°C TO 70°C
Symbol Parameter
Test Conditions
Minimum Typical
VIH
Input High Voltage
2
VIL
Input Low Voltage
-0.3
IIH
Input High Current
VDD = VIN = 3.6V
IIL
Input Low Current
VDD = 3.6V, VIN = 0V
-150
VOH
Output High Voltage; NOTE 1
2.6
VOL
Output Low Voltage; NOTE 1
NOTE 1: Outputs terminated with 50Ω to VDDO/2. See Parameter Measurement Information Section,
"3.3V Output Load Test Circuit".
Maximum
VDD + 0.3
0.8
5
0.5
Units
V
V
µA
µA
V
V
TABLE 5. CRYSTAL CHARACTERISTICS
Parameter
Mode of Oscillation
Frequency
Equivalent Series Resistance (ESR)
Shunt Capacitance
Drive Level
Test Conditions
Minimum Typical Maximum
Fundamental
19.44
TBD
7
TBD
Units
MHz
Ω
pF
µW
840AG-77
www.icst.com/products/hiperclocks.html
3
REV. A NOVEMBER 7, 2005