IC62LV12816L Datasheet, PDF (9/10 Pages) Integrated Circuit Solution Inc – 128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM

IC62LV12816L
IC62LV12816LL
WRITE CYCLE NO. 4 (UB / LB Controlled)
ADDRESS
t WC
ADDRESS 1
t WC
ADDRESS 2
OE
t SA
CS _LOW
WE
UB, LB
DOUT
DIN
t PWB
t HZWE
DATA UNDEFINED
WORD 1
HIGH-Z
t SD
DATAIN
VALID
t HA
t SA
t PWB
WORD 2
t HA
t LZWE
t HD
t SD
DATAIN
VALID
t HD
DATA RETENTION SWITCHING CHARACTERISTICS (L/LL)
Symbol Parameter
Test Condition
Min. Max. Unit
VDR
Vcc for Data Retention
See Data Retention Waveform
1.5 3.6
V
IDR
Data Retention Current
Vcc = 2.0V, CE ³ Vcc – 0.2V Com. (-L) — 20
µA
Com. (-LL) — 5
µA
Ind. (-L) — 25
µA
Ind. (-LL) — 7
µA
tSDR
Data Retention Setup Time See Data Retention Waveform
0—
ns
tRDR
Recovery Time
See Data Retention Waveform
tRC —
ns
DATA RETENTION WAVE.ORM (CE Controlled)
VCC
2.7V
tSDR
Data Retention Mode
tRDR
2.2V
VDR
CE
GND
CE ≥ VCC - 0.2V
Integrated Circuit Solution Inc.
9
LPSR011-0B 06/06/2001