IC61LV2568 Datasheet, PDF (2/9 Pages) Integrated Circuit Solution Inc – 256K x 8 Hight Speed SRAM with 3.3V

IC61LV2568
256K x 8 HIGH-SPEED CMOS STATIC RAM
FEATURES
• High-speed access times:
— 8, 10, 12 and 15 ns
• High-preformance, lower-power CMOS process
• Multiple center power and ground pins for
greater noise immunity
• Easy memory expansion with CE and OE
options
• CE power-down
• CMOS power: 540 mW @ 10 ns
36 mW standby mode
• TTL compatible inputs and outputs
• Single 3.3V ± 10% power supply
• Packages available:
— 36-pin 400mil SOJ
— 44-pin TSOP-2
DESCRIPTION
The ICSI IC61LV2568 is a very high-speed, low power,
262,144-word by 8-bit COMS static RAM. The IC61LV2568 is
fabricated using ICSI's high-performance CMOS technology.
This highly reliable process coupled with innovative circuit
design techniques, yields higher preformance and low power
consumotion devices.
When CE is HIGH (deselected), the device assumes a standby
mode at which the power dissipation can be reduced down to
36 mW (max.) with CMOS input levels.
The IC61LV2568 operates from a single 3.3V power supply and
all inputs are TTL-compatible.
The IC61LV2568 is available in 36-pin, 400mil SOJ and 44-pin
TSOP-2 package.
FUNCTIONAL BLOCK DIAGRAM
A0-A17
VCC
GND
I/O0-I/O7
DECODER
I/O
DATA
CIRCUIT
256K X 8
MEMORY ARRAY
COLUMN I/O
CE
OE
CONTROL
CIRCUIT
WE
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. © Copyright 2000, Integrated Circuit Solution, Inc.
2
Integrated Circuit Solution, Inc.
AHSR023-0A 09/12/2001