IS61C64AH Datasheet, PDF (1/8 Pages) Integrated Circuit Solution Inc – 8K x 8 HIGH-SPEED CMOS STATIC RAM

IS61C64AH
8K x 8 HIGH-SPEED CMOS STATIC RAM
FEATURES
• High-speed access time: 15, 20, 25 ns
• Automatic power-down when chip is
deselected
• CMOS low power operation
— 450 mW (typical) operating
— 250 µW (typical) standby
• TTL compatible interface levels
• Single 5V power supply
• Fully static operation: no clock or refresh
required
• Three state outputs
• Two Chip Enables (CE1 and CE2) for
simple memory expansion
DESCRIPTION
The ICSI IS61C64AH is a very high-speed, low power,
8192-word by 8-bit static RAM. It is fabricated using ICSI's
high-performance CMOS technology. This highly reliable pro-
cess coupled with innovative circuit design techniques, yields
access times as fast as 15 ns with low power consumption.
When CE1 is HIGH or CE2 is LOW (deselected), the device
assumes a standby mode at which the power dissipation can
be reduced down to 250 µW (typical) with CMOS input levels.
Easy memory expansion is provided by using two Chip Enable
inputs, CE1 and CE2. The active LOW Write Enable (WE)
controls both writing and reading of the memory.
The IS61C64AH is packaged in the JEDEC standard 28-pin,
300mil SOJ and 330mil SOP.
FUNCTIONAL BLOCK DIAGRAM
A0-A12
VCC
GND
I/O0-I/O7
DECODER
I/O
DATA
CIRCUIT
256 X 256
MEMORY ARRAY
COLUMN I/O
CE2
CE1
OE
WE
CONTROL
CIRCUIT
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.
Integrated Circuit Solution Inc.
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SR001-B