IS61C512 Datasheet, PDF (1/8 Pages) Integrated Circuit Solution Inc – 64K x 8 HIGH-SPEED CMOS STATIC RAM

I_IS_S61₆C₁51_C2 ₅₁₂
64K x 8 HIGH-SPEED CMOS STATIC RAM
FEATURES
• Pin compatible with 128K x 8 devices
• High-speed access time: 15, 20, 25, 35 ns
• Low active power: 500 mW (typical)
• Low standby power
— 250 µW (typical) CMOS standby
• Output Enable (OE) and two Chip Enable
(CE1 and CE2) inputs for ease in applications
• Fully static operation: no clock or refresh
required
• TTL compatible inputs and outputs
• Single 5V (±10%) power supply
DESCRIPTION
The ICSI IS61C512 is a very high-speed, low power, 65,536
word by 8-bit CMOS static RAMs. They are fabricated using
ICSI's high-performance CMOS technology. This highly
reliable process coupled with innovative circuit design
techniques, yields higher performance and low power con-
sumption devices.
When CE1 is HIGH or CE2 is LOW (deselected), the device
assumes a standby mode at which the power dissipation can
be reduced down to 1 mW (typical) with CMOS input levels.
Easy memory expansion is provided by using two Chip Enable
inputs, CE1 and CE2. The active LOW Write Enable (WE)
controls both writing and reading of the memory.
The IS61C512 is available in 32-pin 300mil DIP, SOJ and
8*20mm TSOP-1 packages.
FUNCTIONAL BLOCK DIAGRAM
A0-A15
VCC
GND
I/O0-I/O7
DECODER
512 X 1024
MEMORY ARRAY
I/O
DATA
CIRCUIT
COLUMN I/O
CE1
CE2
CONTROL
OE
CIRCUIT
WE
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.
Integrated Circuit Solution Inc.
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SR011-0B