IC-PN Datasheet, PDF (6/11 Pages) IC-Haus GmbH – PHASED ARRAY NONIUS ENCODERS

iC-PN Series
preliminary
PHASED ARRAY NONIUS ENCODERS
Rev E1, Page 6/11
ELECTRICAL CHARACTERISTICS
Operating conditions: VCC = 4.1...5.5 V, Tj = -40..125 °C, unless otherwise stated
Item Symbol Parameter
No.
Conditions
Total Device
001 VCC
Permissible VCC Supply Voltage
002 I(VCC) VCC Supply Current
no load, Vout() < Vout()mx
003 Vc()hi
Clamp-Voltage hi at all pins
I() = 4 mA
004 Vc()lo
Clamp-Voltage lo at all pins
I() = -4 mA
Photosensors
101 λar
Spectral Application Range
Se(λar) = 0.25 x S(λpk)
102 S(λ)
103 λpk
Spectral Sensitivity
Peak Sensitivity Wavelength
λ_LED = 740 nm
λ_LED = 850 nm, 460 nm
Photocurrent Amplifiers
201 Iph()
Permissible Photocurrent
Operating Range
202 η()r
Photo Sensitivity
λ_LED = 740 nm
(light-to-voltage conversion ratio)
203 Z()
Equivalent Transimpedance Gain Z = Vout() / Iph()
204 TCz
Temperature Coefficient of
Transimpedance Gain
205 ∆Z()pn Transimpedance Gain Matching P.. channel vs. corresponding N.. channel
206 ∆Vout()pn Signal Matching
no illumination; any output vs. any output
P.. output vs. corresponding N.. output
207 fc()hi
Cut-off Frequency (-3 dB)
208 VNoise() RMS Output Noise
illuminated to 500 mV signal level above dark
level, 500 kHz band width
Signal Outputs
301 Vout()mx Permissible Max. Output Voltage
302 Iout()mx Permissible Max. Load Current
303 Vout()d Dark Signal Level
no illumination, I() ≤ 50 µA
304 Isc()hi
Short-Circuit Current hi
load current to ground
305 Isc()lo
Short-Circuit Current lo
load current to IC
306 Ri()
Internal Output Resistance
f = 1 kHz
307 ton()
Power-On Settling Time
VCC = 0 V → 5 V
Reference Voltage VREF
401 VREF
Reference Voltage
I(VREF) = -100...+300 µA
402 dVout() Load Balancing
I(VREF) = -100...+300 µA
403 Isc()hi
Short-Circuit Current hi
load current to ground
404 Isc()lo
Short-Circuit Current lo
load current to IC
Device Specific: iC-PN1864
V101 Aph()
Radiant Sensitive Area
chip release Y
V102 E()mxr
Irradiance For Max. Signal Level λ_LED = 740 nm, Vout() not saturated;
chip release Y
Device Specific: iC-PN1856
V201 Aph()
Radiant Sensitive Area
chip release Y
V202 E()mxr
Irradiance For Max. Signal Level λ_LED = 740 nm, Vout() not saturated;
chip release Y
Device Specific: iC-PN2656
V301 Aph()
Radiant Sensitive Area
chip release Z
chip release Y1
Unit
Min. Typ. Max.
4.1
5.5
V
9.5
15
mA
11
V
-1.2
-0.3
V
400
950 nm
0.4
A/W
0.3
A/W
680
nm
0
1120 nA
0.3
V/µW
0.7 1.0 1.4 MΩ
-0.12
%/°C
-0.2
0.2
%
-35
35
mV
-2.5
2.5 mV
400
kHz
0.5
mV
2.0
V
-100
250 µA
575 770 1000 mV
100 420 1000 µA
250 480 700 µA
70 110 180
Ω
100
µs
575 770 1000 mV
-10
+10 mV
200 420 1400 µA
0.5 4.5
10
mA
0.065
12
mm²
mW/
cm²
0.038
20
mm²
mW/
cm²
0.11
0.12
mm²
mm²