IC-NZN_14 Datasheet, PDF (6/17 Pages) IC-Haus GmbH – N-TYPE LASER DIODE DRIVER

iC-NZN
N-TYPE LASER DIODE DRIVER
Rev C1, Page 6/17
ELECTRICAL CHARACTERISTICS
Operating Conditions: VDD = 3...5.5 V, VSY = 0 V...VDD, Tj = -20...125 ^◦C, NSLP = hi, CID = lo; unless otherwise stated
Item Symbol Parameter
No.
Conditions
Min. Typ. Max.
309 Vt()lo
Input Threshold Voltage lo at
0.8
TTL, REGE, NSLP, AVG, CID
310 Vhys()
Hysteresis at TTL, REGE, NSLP,
AVG, CID
140 230
311 Ipu()
Pull-Up Current at TTL, REGE V() = 0...VDD − 1.2 V
-60
-2
312 Ipd()
Pull-Down Current at NSLP, AVG, V() = 1 V...VDD
CID
2
130
313 Vs()hi
Saturation voltage hi at SYN
Vs(SYN)hi = VSY − V(SYN), I() = -1 mA,
0.4
VSY = VDD, EP = TTL = High, EN = open
314 Vs()lo
Saturation voltage lo at SYN
I() = 1 mA, TTL = High, VSY = VDD, EP = Low,
0.4
EN = open
315 Isc()hi
Short-circuit Current hi at SYN EP = TTL = High, EN = open, V(SYN) = 0 V,
-40
-3
VSY = VDD
316 Isc()lo
Short-circuit Current lo at SYN EP = TTL = High, EN = open, V(SYN) = 0 V,
3
25
VSY = VDD
317 I(NERR) Current in NERR
V(NERR) > 0.6 V, error
1
20
318 Vs()lo
Saturation Voltage lo at NERR I() = 1 mA, error
600
Laser Driver LDK, CI, IMON
401 Vs(LDK)lo Saturation Voltage lo at LDK
I(LDK) = 300 mA, RSI = 680 Ω, VDD=4.5...5.5 V
I(LDK) = 100 mA, RSI = 680 Ω VDD=4.5...5.5 V
I(LDK) = 60 mA, RSI = 2.5 kΩ VDD=3...3.5 V
1.6
3
1.2
2
0.8 1.3
402 Idc(LDK) Permissible DC Current in LDK
300
403 Vo()
Permissible Voltage at LDK
12
404 C(CI)
Required Capacitor at CI
0
10
405 |I(CI)|
Charge Current from CI
iC active, REGE = hi, V(CI) = 1 V, CID = 0 V
0
iC active, REGE = hi, V(CI) = 1 V, CID = VDD
20
65
406 Ipd(CI) Pull-Down Current in CI
iC active, REGE = lo, CID = hi, V(CI) = 1 V,
0.3
2.6
VDD = 3...5.5 V
407 Imon() Current at IMON
V(IMON) = VDD − 0.5 V, I(LDK) < 300 mA,
VDD = 4.5...5.5 V
1/280
1/200
408 Imin(LDK) Minimum permissible current
0.5
pulse
409 Imax(LDK) Maximum obtainable current from V(REGE) = V(TTL) = V(EP) = VDD,
the driver
V(MD) = 0 V;
VDD = 4.5...5.5 V, RSI = 680 Ω
300
VDD = 3...4.5 V, RSI = 2.5 kΩ
90
Timing
501 twu
Time to Wakeup:
CLDA = 1 µF, RSI = 680 Ω
300
NSLP lo → hi to system enable
502 tr
Laser Current Rise Time
VDD = 5 V see Fig. 2
1.5
503 tf
Laser Current Fall Time
VDD = 5 V see Fig. 2
1.5
504 tp
Propagation Delay
VDD = 5 V
10
V(EPx, ENx) → I(LDKx)
Unit
V
mV
µA
µA
V
V
mA
mA
mA
mV
V
V
V
mA
V
nF
µA
µA
µA
I(LDK)
mA
mA
mA
µs
ns
ns
ns