IC-HK_15 Datasheet, PDF (6/10 Pages) IC-Haus GmbH – 155MHz LASER SWITCH

iC-HK, iC-HKB
155 MHz LASER SWITCH
Rev F2, Page 6/10
ELECTRICAL CHARACTERISTICS
Operating Conditions: VDD = 3.5...5.5 V, Tj = -25...125 °C unless otherwise stated
Item Symbol Parameter
No.
Conditions
Tj Fig.
Unit
°C
Min. Typ. Max.
Total Device
001 VDD
Permissible Supply Voltage
3.5
5.5
V
002 I(VDD) Supply Current in VDD
CW operation
0
80
µA
003 I(VDD) Supply Current in VDD
pulsed operation,
f(EN1, EN2) = 150 MHz
0
150 mA
004 V(LDK) Permissible Voltage at LDK
iC-HK
iC-HKB
0
5.5
V
0
12
V
005 Vc(CI)hi Clamp Voltage hi at CI
Vc(CI) = V(CI) – VDD,
I(CI) = 10 mA, other pins open
0.4
1.25
V
006 Vc(EN)hi Clamp Voltage hi at EN1, EN2 Vc(EN) = V(EN) – VDD,
I(EN) = 1 mA, other pins open
0.4
1.25
V
007 Vc()lo
Clamp Voltage lo at VDD, LDK, I() = -10 mA, other pins open
CI, EN1, EN2, AGND1, AGND2
-1.25
-0.4
V
008 Ipd()
Pull-Down Current at CI, EN1,
EN2
1
5
µA
009 Toff
Overtemperature Shutdown
110
150
°C
Laser Control LDK, CI, EN1, EN2
101 Icw(LDK) Permissible CW Current in LDK
(per channel)
150 mA
102 Ipk(LDK) Permissible Pulsed Current in f > 100 kHz, thi/T < 1:10
LDK (per channel)
700 mA
107 Vs(LDK) Saturation Voltage at LDK
I(LDK) = 40 mA
I(LDK) = 60 mA
I(LDK) = 150 mA, iC-HK
I(LDK) = 150 mA, iC-HKB
1.2
V
1.3
V
1.5
V
1.8
V
108 I0(LDK)
109 tr()
Leakage Current in LDK
LDK Current Rise Time
110 tf()
LDK Current Fall Time
111 tp()
Propagation Delay
V(ENx) → I(LDK)
ENx = lo, V(LDK) = VDD
Iop = 150 mA,
I(LDK): 10% → 90%Iop
Iop(LDK) = 150 mA,
I(LDK): 90% → 10%Iop
ENx hi ↔ lo, V(50%) → I(50%)
3
3
1^∗
0
10
µA
1.5^∗
ns
1.5^∗
ns
3^∗
ns
112 Vt(ENx) Input Threshold Voltage
33
50
67 %VDD
113 V(CI)
Permissible Voltage at CI
0
5.5
V
114 Vt(CI)
Threshold Voltage at CI
I(LDK) < 5 mA
0.75
1.15
V
115 CR()
Current Matching Chan-
nel1/Channel2
V(CI) = 0...VDD,
I(LDK) = 30...300 mA, RK1 = RK2
0.9
1
1.1
∗ _{Projected values by sample characterization}