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IC-NZN_12 Datasheet, PDF (5/17 Pages) IC-Haus GmbH – N-TYPE LASER DIODE DRIVER
iC-NZN
N-TYPE LASER DIODE DRIVER
preliminary
Rev B2, Page 5/17
ELECTRICAL CHARACTERISTICS
Operating Conditions: VDD = 3...5.5 V, VSY = 0 V...VDD, Tj = -20...125 °C, NSLP = hi, CID = lo; unless otherwise stated
Item Symbol Parameter
No.
Conditions
Unit
Min. Typ. Max.
Total Device
001 VDD
Permissible Supply Voltage
3
5.5
V
002 VSY
Permissible Supply Voltage at
VSY
VSY ≤ VDD
3
5.5
V
003 Ioff(VDD) Supply Current in VDD
NSLP = lo, all other input pins set to lo
5
50
µA
004 Idc(VDD) Supply Current in VDD
RSI ≥ 680 Ω
10
15
mA
005 I(VSY) Supply Current in VSY
SYN pin open
10
µA
006 Tab
Thermal Shutdown Threshold
130
196
°C
007 VDDon Power-On Threshold
1.7
2.8
V
008 Vc()hi
Clamp Voltage hi at RSI, TTL, I() = 0.1 mA, other pins open, VDD = 0
0.3
REGE, MD, CI, LDA, NSLP,
IMON
1.5
V
009 Vc()hi
Clamp Voltage hi to VSY at SYN I() = 1 mA, other pins open, VSY = 0
0.3
1.5
V
010 Vc()hi
Clamp Voltage hi at LDK
I() = 1 mA, other pins open
12
V
011 Vc()lo
Clamp Voltage lo at VDD, AVG,
MD, IMON, CID, EP, EN, TTL,
VSY, SYN, RGND, RVDD, LDK,
AGND, CI, LDA, RSI, REGE,
NSLP, NERR
I() = 1 mA, other pins open
-1.5 -0.65 -0.3
V
012 Vc()hi
Clamp Voltage hi at VSY, EP, EN I() = 1 mA, other pins open, VDD = 0
6
V
Current Monitor RSI, LDA
101 V(RSI) Voltage at RSI
430 520 580 mV
102 RSI
Permissable Resistor at RSI
VDD = 3...3.5 V
VDD = 4.5...5.5 V
2.5
9
kΩ
0.68
9
kΩ
103 VLDA
LDA Voltage Monitor Threshold VDD − V(LDA), V(RSI) = VDD
400 500 630 mV
104 Ierr(LDA) Maximum Unlimited current from V(RSI) = VDD;
LDA without error signaling
VDD = 4.5...5.5 V
VDD = 3...3.5 V
400
880 mA
260
630 mA
105 Cmin(LDA) Minimum capacitor needed at
LDA
100
nF
106 rILDA
Current Ratio I(LDA)max / I(RSI) V(LDA) = 0 V
VDD = 4.5...5.5 V
VDD = 3...3.5 V
470
610
430
610
107 rILDK
Current Ratio I(LDK)max / I(RSI) V(LDK) = V(REGE) = V(TTL) = V(EP) = VDD,
V(MD) = 0 V
VDD = 4.5...5.5 V
400
960
VDD = 3...3.5 V
480
870
108 i(ldk)
Maximum limited current
RSI = 0.68 KΩ VDD = 5.5 V
630 mA
109 Rdis(LDA) Discharge Resistor at LDA
NSLP = lo, V(LDA) = VDD
1
20
kΩ
Reference
201 V(MD)
V(MD) − V(RGND),
closed control loop
V(RVDD) − V(MD) for P-type LD
or ACC
460 510 560 mV
202 dV(MD)
Temperature Drift of Voltage at closed control loop
MD
120
µV/°C
203 V(MD) V(MD) − V(RGND)
V(EP) = 0 V, V(AVG) = 0 V, N-type LD
460 510 560 mV
Digital Inputs/Outputs
301 Vin()
Input Voltage Range at EP, EN TTL = lo, VDD = 3.0...5.5 V
0.6
VDD − V
1.4
302 Vd()
Input Differential Voltage at EP, TTL = lo, Vd() = |V(EP) − V(EN)|
200
mV
EN
303 R()
Differential Input Impedance at TTL = lo
EP, EN
V(EP), V(EN) < VDD − 1.5 V
0.6
3
kΩ
304 Vt(EP)hi Input Threshold Voltage hi at EP TTL = hi, EN = open
2
V
305 Vt(EP)lo Input Threshold Voltage lo at EP TTL = hi, EN = open
0.8
V