IC-HK Datasheet, PDF (5/8 Pages) IC-Haus GmbH – 155MHz LASER SWITCH

iC-HK, iC-HKB
155 MHz LASER SWITCH
Rev F1, Page 5/8
ELECTRICAL CHARACTERISTICS
Operating Conditions: VDD = 3.5...5.5 V, Tj = -25...125 °C unless otherwise stated
Item Symbol Parameter
No.
Conditions
Tj Fig.
Unit
°C
Min. Typ. Max.
Total Device
001 VDD
Permissible Supply Voltage
3.5
5.5
V
002 I(VDD) Supply Current in VDD
CW operation
0
80
µA
003 I(VDD)
004 V(LDK)
Supply Current in VDD
Permissible Voltage at LDK
pulsed operation,
f(EN1, EN2) = 150 MHz
iC-HK
iC-HKB
0
150 mA
0
5.5
V
0
12
V
005 Vc(CI)hi Clamp Voltage hi at CI
Vc(CI) = V(CI) – VDD,
I(CI) = 10 mA, other pins open
0.4
1.25
V
006 Vc(EN)hi Clamp Voltage hi at EN1, EN2 Vc(EN) = V(EN) – VDD,
I(EN) = 1 mA, other pins open
0.4
1.25
V
007 Vc()lo
Clamp Voltage lo at VDD, LDK, I() = -10 mA, other pins open
CI, EN1, EN2, AGND1, AGND2
-1.25
-0.4
V
008 Ipd()
Pull-Down Current at CI, EN1,
EN2
1
5
µA
009 Toff
Overtemperature Shutdown
110
150 °C
Laser Control LDK, CI, EN1, EN2
101 Icw(LDK) Permissible CW Current in LDK
(per channel)
150 mA
102 Ipk(LDK) Permissible Pulsed Current in
LDK (per channel)
f > 100 kHz, thi/T < 1:10
700 mA
107 Vs(LDK) Saturation Voltage at LDK
I(LDK) = 40 mA
I(LDK) = 60 mA
I(LDK) = 150 mA, iC-HK
I(LDK) = 150 mA, iC-HKB
1.2
V
1.3
V
1.5
V
1.8
V
108 I0(LDK) Leakage Current in LDK
ENx = lo, V(LDK) = VDD
0
10
µA
109 tr()
LDK Current Rise Time
Iop = 150 mA,
3
I(LDK): 10% → 90%Iop
1.5
ns
110 tf()
LDK Current Fall Time
Iop(LDK) = 150 mA,
3
I(LDK): 90% → 10%Iop
1.5
ns
111 tp()
Propagation Delay
V(ENx) → I(LDK)
ENx hi ↔ lo, V(50%) → I(50%)
1
3
ns
112 Vt(ENx) Input Threshold Voltage
33
50
67 %VDD
113 V(CI)
Permissible Voltage at CI
0
5.5
V
114 Vt(CI)
Threshold Voltage at CI
I(LDK) < 5 mA
0.75
1.15
V
115 CR()
Current Matching Chan-
nel1/Channel2
V(CI) = 0...VDD,
I(LDK) = 30...300 mA, RK1 = RK2
0.9
1
1.1