IC-WJB Datasheet, PDF (4/12 Pages) IC-Haus GmbH – 2.7 V LASER DIODE DRIVER

iC-WJB
2.7 V LASER DIODE DRIVER
Rev E1, Page 4/12
ELECTRICAL CHARACTERISTICS
Operating Conditions: VCC = 2.7...6 V, RSET = 2.7...27 kΩ, I(AMD) = 0.15...1.5 mA, Tj = -25...125 °C, unless otherwise noted.
Item Symbol Parameter
No.
Conditions
Min. Typ. Max.
Total Device
001 VCC
Permissible Supply Voltage
Range
2.7
6
002 Idc(VCC) Supply Current in VCC
RSET = 5 kΩ, IN = hi, Idc(KLD) = 40 mA
4
7
13
003 I0(VCC) Standby Supply Current in VCC REST= 5 kΩ, IN = lo, Tj = 27 °C
5
004 Iav(VCC) Supply Current in VCC (average Ipk(KLD) = 80 mA, f(IN) = 200 kHz ±20 %,
value)
twhi / twlo = 1
9
15
005 tp(IN-KLD) Delay Time Pulse Edge V(IN) to IN(hi ↔ lo), V(50 %) : I(50 %)
I(KLD)
65
135
006 Pcon
Power Consumption
VCC = 3 V, V(KLD) ≈ 0.6 V, RSET = 5 kΩ,
50
Idc(KLD) = 40 mA
007 Vc()hi
Clamp Voltage hi at VCC, IN,
AMD, KLD, CI, CWD, ISET
I() = 2 mA, other pins open
Tj = 27 °C
6.2
10
7.5
Driver
101 Vs(KLD) Saturation Voltage at KLD
IN = hi, I(KLD) = 80 mA
Tj = 27 °C
0.3
0.11
102 Vs(KLD) Saturation Voltage at KLD
IN = hi, I(KLD) = 100 mA
0.4
103 I0(KLD) Leakage Current in KLD
IN = lo, V(KLD) = VCC
10
104 V(AMD) Voltage at AMD
I(AMD) = 1.5 mA
Tj = 27 °C
0.4
1.0
0.84
105 tr
Current Rise Time in KLD
Imax(KLD) = 20...80 mA, Ip(): 10 → 90 %
Tj = 27 °C
100
30
106 tf
Current Fall Time in KLD
Imax(KLD) = 20...80 mA, Ip(): 90 % → 10 %
Tj = 27 °C
100
20
107 CR1()
Current Ratio I(AMD)/I(ISET)
I(CI) = 0, closed control loop;
RSET = 2.7..27 kΩ
RSET = 27..330 kΩ
2.4
3
3.8
2.4 3.6 5.4
108 CR2()
Current Ratio I(AMD)/I(CI)
V(CI) = 1...2 V, ISET open
2.7
3
3.3
109 TC1()
Temperature Coefficient of
Current Ratio I(AMD)/I(ISET)
I(CI) = 0, closed control loop;
RSET = 2.7...27 kΩ
RSET = 27...330 kΩ
0.01
-0.1 -0.25
Input IN
201 Vt()hi
Threshold hi
45
70
202 Vt()lo
Threshold lo
40
65
203 Vt()hys Hysteresis
Tj = 27 °C
20
65
204 Rin
Pull-Down Resistor
V(IN) = -0.3 V...VCC
Tj = 27 °C
4
16
10
205 V0()
Open-loop Voltage
I(IN) = 0
0.1
Reference und Thermal Shutdown
301 V(ISET) Voltage at ISET
Tj = 27 °C
1.16
1.28
1.22
302 CR()
Current Ratio I(CI)/I(ISET)
V(CI) = 1...2 V, I(AMD) = 0
0.9
1
1.12
303 RSET
Permissible Resistor at ISET
(Control Set-up Range)
2.7
330
304 Toff
Thermal Shutdown Threshold
125
150
305 Thys
Thermal Shutdown Hysteresis
10
40
Power-Down and Watchdog
401 VCCon Turn-on Threshold VCC
Tj = 27 °C
2.4
2.7
2.6
402 VCCoff
Undervoltage Threshold at VCC
Tj = 27 °C
2.3
2.63
2.5
403 VCChys Hysteresis
VCChys = VCCon − VCCoff
70 100 150
404 Vs(CI)off Saturation Voltage at CI with
I(CI) = 300 µA, VCC < VCCoff
1.5
undervoltage
Unit
V
mA
mA
mA
ns
mW
V
V
V
V
V
µA
V
V
ns
ns
ns
ns
% / °C
% / °C
%VCC
%VCC
mV
mV
kΩ
kΩ
V
V
V
kΩ
°C
°C
V
V
V
V
mV
V