IC-VJ Datasheet, PDF (4/10 Pages) IC-Haus GmbH – LASER DIODE CONTROLLER

iC-VJ, iC-VJZ
LASER DIODE CONTROLLER
Rev A1, Page 4/10
ELECTRICAL CHARACTERISTICS
Operating Conditions: VCC = 5 V ±10%, RSET = 5...50 kΩ, iC-VJ: I(AMD) = 50...500 µA,
iC-VJZ: I(AMD) = 0.15...1.5 mA; Tj = -25...125 °C, unless otherwise stated.
Item Symbol Parameter
No.
Conditions
Tj Fig.
Unit
°C
Min. Typ. Max.
Total Device
001 VCC
Permissible Supply Voltage
Range at VCC
4.5
5.5
V
002 Iav(VCC)
Supply Current in VCC (average Iav(KLD) = 100 mA,
value)
fosc = 3.2 MHz ±20%,
I(PRF, NPRF) = 0
50
mA
003 tp(KLD-
PRF)
Pulse Edge Delay
I(KLD) to V(PRF)
PRF(hi ↔ lo), I(50%):V(50%)
-70
70
ns
004 tp(KLD-
NPRF)
Pulse Edge Delay
I(KLD) to V(NPRF)
NPRF(hi ↔ lo), I(50%):V(50%)
-70
70
ns
Driver KLD, AMD
101 Vs(KLD) Saturation Voltage at KLD
PRF = hi, I(KLD) = 200 mA
1.5
V
102 I0(KLD) Leakage Current in KLD
PRF = lo, V(KLD) = VCC
10
µA
103 I(KLD)
Current in KLD
I(AMD) = 0
250
mA
104 V(AMD) Voltage at AMD
iC-VJ: I(AMD) = 500 µA
iC-VJZ: I(AMD) = 1.5 mA
0.5
1.5
V
105 tr
Current Rise Time in KLD
Imax(KLD) = 20...250 mA,
I(KLD): 10% → 90%
150
ns
106 tf
Current Fall Time in KLD
Imax(KLD) = 20...250 mA,
I(KLD): 90% → 10%
150
ns
107 CR1()av
Average Value for Current Ratio I(CI) = 0, closed control loop;
I(AMD) / I(ISET)
iC-VJ
iC-VJZ
0.8
1
1.2
2.4
3
3.6
108 CR2()
Current Ratio I(AMD) / I(CI)
V(CI) = 1...3.5 V, ISET open;
iC-VJ
iC-VJZ
0.9
1
1.1
2.7
3
3.3
Output PRF, NPRF
201 Vav()
Average Value of Output Voltage I(PRF, NPRF) = 0...-4 mA
47.5 50 52.5 %VCC
202 Vpk()
Amplitude
I(PRF, NPRF) = 0...-4 mA
625 750 875 mV
203 tpp()
Pulse/Pause Ratio
0.95
1
1.05
204 j()
Jitter
VCC, fosc = const.
20
ns
205 tr()
Rise Time
CL() = 50 pF, V(): 10% → 90%
150
ns
206 tf()
Fall Time
CL() = 50 pF, V(): 90% → 10%
150
ns
Oscillator R, RC
301 fosc
Oscillator Frequency
R1 = 800 Ω, C1 = 100 pF
2.64 2.9 3.19 MHz
302 fosc/f0 Frequency Drift
R × C = constant
0.85
1
1.15
Divider
401 Div
Division Factor fosc / PRF
16
Reference ISET
501 V(ISET) Reference Voltage
1.20
1.27
V
27
1.22
V
502 CR()
Current Ratio I(CI) / I(ISET)
V(CI) = 1...3.5 V, I(AMD) = 0
0.9
1
1.1
503 RSET
Permissible Resistor at ISET to
AGND (Control Set-up Range)
2.7
50
kΩ
Power-on and Thermal Shutdown
601 VCCon Turn-on Threshold VCC
3.0
4.1
V
602 VCChys Hysteresis
300
450 mV
603 Toff
Thermal Shutdown Threshold
125
150 °C
604 Thys
Thermal Shutdown Hysteresis
10
°C
605 Vs(CI)lo Saturation Voltage lo at CI in
case of undervoltage
VCC = 0...VCCon − VCChys,
I(CI) = 300 µA
1.5
V