IC-HQ Datasheet, PDF (4/7 Pages) IC-Haus GmbH – HIGH-PERFORMANCE QUAD OPAMP

iC-HQ
HIGH-PERFORMANCE QUAD OPAMP
preliminary
Rev A1, Page 4/7
ELECTRICAL CHARACTERISTICS
Operation Conditions: VDD = 5 V ±10 %, Tj = -40...125 °C, unless otherwise noted
Item Symbol Parameter
No.
Conditions
Total Device
001 VDD
Permissible Supply Voltage
002 I(VDD) Supply Current in VDD
Total iC, all 4 OPAMPs without load
003 Vc(hi)
Clamp Voltage hi at Ox
VDD = 0 V, I() = 10 mA
004 Vc(lo)
Clamp Voltage lo at Ox
VDD = 0 V, I() = -10 mA
005 Vc(hi)
Clamp Voltage hi IPx, INx
VDD = 0 V, I() = 1 mA
006 Vc(lo)
Clamp Voltage lo IPx, INx
VDD = 0 V, I() = -1 mA
007 CMRR
008 PSRR
Common Mode Rejection Ratio ∆V_os/∆V_cm bei ∆V_cm = 3.5 V
Power Supply Rejection Ratio
009 A_V0
Open Loop Gain
RL = 1 kΩ
010 LRR
Offset Shift vs. Power Dissipation ∆V_os at ∆Pv(O1...4) = 1 mW
Inputs IN1...4, IP1...4
101 V_os
Offset Voltage
V()_cm = 1.5 V, closed loop operation;
iC-HQ Tj = -40...27 °C
iC-HQ Tj = -40...125 °C
iC-HQL
102 dV_os/dT
103 Ib()
Offset Voltage Drift
Input Current I(IPx), I(INx)
Tj = -40...125 °C
104 I_os()
105 V_cm()
Input Offset Current
Input Voltage Range
Outputs O1...4
201 V()hi
Output Voltage hi at Ox
202 V()lo
Output Voltage lo at Ox
203 Vs()hi
Saturation Voltage hi at Ox
204 Vs()lo
Saturation Voltage lo at Ox
205 Isc()hi
Short Circuit Current from Ox
206 Isc()lo
Short Circuit Current in Ox
Dynamic Parameters
301 SR
Slew Rate at Ox
302 GBP
Gain bandwith product
303 t_set14
304 t_set10
305 t_on
Settling time 14 Bit
Settling time 10 Bit
Start-up time
306 V_noise
307 e_n
Noise voltage
Noise density
VDD = 5 V, RL = 100 kΩ vs. GND
RL = 100 kΩ vs. VDD
Vs()hi = VDD − V(Ox), I() = -1.2 mA
I() = 1.2 mA
Short circuit Ox to GND
Short circuit Ox to VDD
RL = 10 kΩ, Av = -1, CL = 15 pF
RL = 10 kΩ, CL = 15 pF
1 V step, Av ≤ 100, 14 Bit
1 V step, Av ≤ 100, 10 Bit
Referenced to the input up to 1 Hz
f = 3.5 kHz...3.5 MHz
f = 2...10 kHz
f = 100 Hz...5 kHz
f = 1...100 Hz
Unit
Min. Typ. Max.
4.5
5.5
V
1.2 1.5
2
mA
0.3
1.5
V
-1.5
-0.3
0.3
1.8
V
-1.5
-0.3
V
125 130
dB
125^∗ 135
dB
130 140
dB
-0.3
0
0.3
µV
-1
-1
-10
-0.01^∗
-400
-0.1
0
1
µV
0
1.6
µV
10
µV
0.01^∗ µV/°C
5
400 pA
400 pA
VDD − V
1.1
4.95 4.987
V
11
30
mV
250 600 mV
125 250 mV
-30 -12
-5
mA
1.5 3.4
8
mA
1.75 2.5 3.6 V/µs
3.5
MHz
350 500^∗
µs
150 300
µs
100 200
µs
600
nV_√SS
38
nV/_√Hz
70
nV/_√Hz
134
nV/_√Hz
160
nV/ Hz
∗ _{Projected values by sample characterization.}