ICE10N73FP Datasheet, PDF (5/8 Pages) Icemos Technology – Enhancement Mode MOSFET

100000
Capacitance
10000
1000
100
Ciss
Coss
10
1
0
Crss
100 200 300 400 500 600
V_DS - Drain-to-Source Votlage (V)
Maximum Rated Forward Biased Safe Operating Area
100
10
Single Pulse,
Tc = 25^oC,
T_j=150^oC,
V_GS = 10V
10us
100us
1ms
1
DC
0.1
R_DS(on) Limit
Package Limit
Thermal Limit
0.01
1
10
100
V_DS - Drain-to-Source Voltage (V)
1000
Preliminary Data Sheet
ICE10N73FP
Drain-to-Source Breakdown Voltage vs. Junction Temperature
1.2
1.1
I_D = 1mA
1.0
0.9
0.8
-50 -25 0 25 50 75 100 125 150
T_J - Junction Temperature (˚C)
Transient Thermal Response, Junction-to-Case
1.00
0.5
0.2
0.1
0.10
0.05
0.02
0.01
Single Pulse
0.00
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00
t - Time (s)
SP-10N73FP-000-1b
04/16/2013
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