ICE35N60W Datasheet, PDF (4/8 Pages) Icemos Technology – N-Channel Enhancement Mode MOSFET

100
90
80
70
60
50
40
30
20
10
0
0
200
Output Characteristics
V_GS=10 to 7V
6V
5V
5
10
15
V_DS - Drain-to-Source Voltage (V)
On Resistance vs Drain Current
160
120
V_GS = 10V
80
40
0
0
20
40
60
80
100
I_D - Drain current (A)
Gate Charge
10
9
8
V_DS = 480V
7
I_D = 35A
6
5
4
3
2
1
0
0
50
100
150
200
Q_g - Total Gate Charge (nC)
SP-35N60W-000-3
05/15/2013
Preliminary Data Sheet
ICE35N60W
100
90
80
70
60
50
40
30
20
10
0
0
Transfer Characteristics
T_J = 150˚C
25˚C
2
4
6
8
10
V_GS - Gate-to-Source (V)
On Resistance vs Junction Temperature
4.0
3.5
3.0
V_GS = 10V
I_D = 18A
2.5
2.0
1.5
1.0
0.5
0.0
-50
-25 0 25 50 75 100 125 150
T_J - Junction Temperature (˚C)
Gate Threshold Voltage vs Junction Temperature
1.4
1.3
1.2
1.1
1.0
I_D = 250μA
0.9
0.8
0.7
0.6
0.5
0.4
-50
-25 0 25 50 75 100 125 150
T_J - Junction Temperature (˚C)
4