ICE10N65 Datasheet, PDF (4/9 Pages) Icemos Technology – N-Channel Enhancement Mode MOSFET

Output Characteristics
30
V_GS=10V
25
7V
20
6V
15
10
5V
5
0
0
3
6
9
12
15
V_DS - Drain-to-Source Voltage (V)
On Resistance vs Drain Current
800
700
600
500
400
V_GS = 10V
300
200
100
0
0
5
10
15
20
25
30
I_D - Drain current (A)
Gate Charge
10
9
8
V_DS = 480V
7
I_D = 9.5A
6
5
4
3
2
1
0
0
10
20
30
40
Q_g - Total Gate Charge (nC)
SP-10N65-000-3b
06/05/2013
Preliminary Data Sheet
ICE10N65
Transfer Characteristics
30
25
20
15
10
5
0
0
T_J = 150˚C
25˚C
2
4
6
8
10
V_GS - Gate-to-Source (V)
On Resistance vs Junction Temperature
4.0
3.5
3.0
V_GS = 10V
I_D = 4.7A
2.5
2.0
1.5
1.0
0.5
0.0
-50
-25 0 25 50 75 100 125 150
T_J - Junction Temperature (˚C)
Gate Threshold Voltage vs Junction Temperature
1.4
1.3
1.2
1.1
1.0
I_D = 250μA
0.9
0.8
0.7
0.6
0.5
0.4
-50
-25 0 25 50 75 100 125 150
T_J - Junction Temperature (˚C)
4