ICE10N73 Datasheet, PDF (3/8 Pages) Icemos Technology – Enhancement Mode MOSFET

Preliminary Data Sheet
ICE10N73
Parameter
Symbol
Conditions
Gate charge characteristics
Gate to source charge
Q_gs
Gate to drain charge
Q_gd
Gate charge total
Q_g
Gate plateau voltage
V_plateau
Reverse Diode
Diode forward voltage
V_SD
Reverse recovery time
t_rr
Reverse recovery charge
Q_rr
Peak reverse recovery current I_rm
V_DS=480 V, I_D=10A,
V_GS=10 V
V_GS=0V, I_S=I_F
V_RR=480V, I_S=I_F,
d_iFId_t=100 A/µS
Values
Unit
Min Typ Max
-
16
-
-
30
-
nC
-
82
-
-
5
-
V
- 1.0 1.2 V
- 423 -
ns
-
8
-
µC
-
34
-
A
SP-10N73-000-1c
04/16/2013
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