ICE60N800D Datasheet, PDF (2/9 Pages) Icemos Technology – N-Channel Enhancement Mode MOSFET

Preliminary Data Sheet
ICE60N800D
Parameter
Symbol
Conditions
Thermal characteristics
Thermal resistance, junction-
case ^a
R_thJC
Thermal resistance, junction-
ambient ^a
R_thJA
Soldering temperature, wave
soldering only allowed at leads
T _sold
leaded
1.6mm (0.063in.) from
case for 10 s
Values
Unit
Min Typ Max
-
- 2.2
°C/W
-
- 68
-
- 260 °C
Electrical characteristics ^b , at T_j=25°C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS
Gate threshold voltage
V_GS(th)
Zero gate voltage drain current I_DSS
Gate source leakage current
Drain-source
on-state resistance
I_GSS
R_{DS (on)}
V_GS=0 V, I_D=250µA
V_DS=V_GS, I_D=250µA
V_DS=600V, V_GS=0V,
T_j=25°C
V_DS=600V, V_GS=0V,
T_j=150°C
V_GS=±20 V, V_DS=0V
V_GS=10V, I_D=2.5A,
T_j=25°C
V_GS=10V, I_D=2.5A,
T_j=150°C
600 -
-
V
2.1
3 3.9
-
0.1 1
µA
-
- 100
-
- 100 nA
- 0. 65 0.8
Ω
-
1.7 -
Gate resistance
R_G
f=1 MHZ, open drain
-
6
-
Ω
Dynamic characteristics
Input capacitance
C_iss
Output capacitance
C_oss
Reverse transfer capacitance C_rss
Transconductance
g_fs
Turn-on delay time
t_d(on)
Rise time
T_r
Turn-off delay time
t_d(off)
Fall time
t_f
V_GS=0 V, V_DS=25 V,
f=1 MHz
- 635 -
- 365 -
pF
-
6
-
V_DS>2*I_D*R_DS, I_D=2.5A
-
7
-
S
-
6
-
V_DS=380V, V_GS=10V,
-
I_D=5A, R_G=4Ω (External) _-
3.5 -
54 -
ns
-
7
-
SP-60N800D-000-0b
05/24/2013
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