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ICE4N70 Datasheet, PDF (2/9 Pages) Icemos Technology – N-Channel Enhancement Mode MOSFET
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Preliminary Data Sheet
ICE4N70
Parameter
Symbol
Conditions
Thermal characteristics
Thermal resistance, junction-
case a
RthJC
Thermal resistance, junction-
ambient a
RthJA
Soldering temperature, wave
soldering only allowed at leads
T sold
leaded
1.6mm (0.063in.) from
case for 10 s
Values
Unit
Min Typ Max
-
- 1.9
oC/W
-
- 68
-
-
260
oC
Electrical characteristics b , at Tj=25oC, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS
Gate threshold voltage
VGS(th)
Zero gate voltage drain current IDSS
Gate source leakage current IGSS
VGS=0 V, ID=250µA
VDS=VGS, ID=250µA
VDS=700V, VGS=0V,
Tj=25oC
VDS=700V, VGS=0V,
Tj=150oC
VGS=±20 V, VDS=0V
700 730 -
V
2.1
3 3.9
-
0.1 1
µA
-
- 100
-
- 100 nA
VGS=10V, ID=2A, Tj=25oC -
Drain-source on-state resistance RDS (on)
VGS=10V, ID=2A,
Tj=150oC
-
1.0 1.2
Ω
2.6 -
Gate resistance
RG
f=1 MHZ, open drain
-
6.3 -
Ω
Dynamic characteristics
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance Crss
Transconductance
gfs
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
VGS=0 V, VDS=25 V,
f=1 MHz
- 630 -
- 430 -
pF
-
12 -
VDS>2*ID*RDS, ID=2A
-
4
-
S
-
22 -
VDS=480V, VGS=10V,
-
ID=4A, RG=4Ω (External) -
5
-
67 -
ns
-
4.5 -
SP-4N70-000-3b
07/03/2013
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