ICE2N73D Datasheet, PDF (2/9 Pages) Icemos Technology – Enhancement Mode MOSFET

Preliminary Data Sheet
ICE2N73D
Parameter
Symbol
Conditions
Thermal characteristics
Thermal resistance, junction-
case
R_thJC
Thermal resistance, junction-
ambient
R_thJA
Soldering temperature, wave
soldering only allowed at leads
T _sold
leaded
1.6mm (0.063in.) from
case for 10 s
Values
Unit
Min Typ Max
-
- 1.9
o_C/W
-
- 68
-
- 260 ^oC
Electrical characteristics ^b , at T_j=25^oC, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS
Gate threshold voltage
V_GS(th)
Zero gate voltage drain current I_DSS
Gate source leakage current IGSS
V_GS=0 V, I_D=250µA
V_DS=V_GS, I_D=250µA
V_DS=730V, V_GS=0V,
T_j=25^oC
V_DS=730V, V_GS=0V,
T_j=150^oC
V_GS=±20 V, V_DS=0V
730 770 -
V
2.1
3 3.9
-
0.5 5
µA
-
- 100
-
- 100 nA
Drain-source
on-state resistance
V_GS=10V, I_D=1A, T_j=25^oC -
R_{DS (on)}
V_GS=10V, I_D=1A,
T_j=150^oC
-
1.0 1.2
Ω
2.6 -
Gate resistance
R_G
f=1 MHZ, open drain
-
6.3 -
Ω
Dynamic characteristics
Input capacitance
C_iss
Output capacitance
C_oss
Reverse transfer capacitance C_rss
Transconductance
g_fs
Turn-on delay time
t_d(on)
Rise time
t_r
Turn-off delay time
t_d(off)
Fall time
t_f
V_GS=0 V, V_DS=25 V,
f=1 MHz
- 630 -
- 430 -
pF
-
12 -
V_DS>2*I_D*R_DS, I_D=1A
-
4
-
S
-
22 -
V_DS=480V, V_GS=10V,
-
I_D=2A, R_G=4Ω (External) _-
5
-
67 -
ns
-
4.5 -
SP-2N73D-000-0
08/30/2013
2